VTSU011K2 Datasheet

VTSU011K2 RF Power N-channel MOSFET

The VTSU011K2 is a 1200-watt, N-channel MOSFETs, designed for pulsed applications at frequencies up to 200 MHz. It’s suitable for use in industrial, scientific and medical applications.  Typical Performance (In Demo Fixture): VDD = 100 Volts, IDQ = 500 mA, Pulse CW, Pulse Width=1ms, Duty cycle=10.

Features

 Common source configuration, push pull
 Excellent thermal stability, low HCI drift
 Low RDS(on)
 Pb-free, RoHS-compliant Table 1. Maximum Ratings Rating Drain-Source Voltage Drain-Gate Voltage (RGS = 1MΩ) Gate-Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol V(BR)DSS VDGR VGS Tstg TC TJ Drain 1 Gate 2 Source 3 Figure 1. Pin Connection Value 200 200 -20 to +20 -65 to 150 150 200 Unit V V V.