HM3400D Datasheet

HM3400D N-Channel Enhancement Mode Power MOSFET

The HM3400D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. GENERAL FEATURES ● VDS = 30V,ID = 5.0A RDS(ON) < 52mΩ @ VGS=2.5V RDS(O.

Features

● VDS = 30V,ID = 5.0A RDS(ON) < 52mΩ @ VGS=2.5V RDS(ON) < 36mΩ @ VGS=4.5V RDS(ON) < 32mΩ @ VGS=10V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package D G S Schematic diagram 3400D Marking and pin Assignment Application
●PWM applications
●Load switch
●Power management SOT-23-3L top view Package Marking And Ordering Information Device Marking Device Device Package 3400D HM3400D SOT-23-3L Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltag.