FPT51 0 I FPT530 I FPT550 are nitride-passivated npn Planar silicon phototransistors. These devices are packaged in a TO-18 style, hermetically sealed package with lens cap. For most applications two pins are used (collector and emitter pins). The availability of the base pin gives wide latitude for.
Tc = 25°C Derate Linearly from 25°C Total Dissipation at TA = 25°C Derate Linearly from 25°C 600mW 4.8 mW/oC 300mW 2.4 mW/oC Maximum Voltages and Currents VCB Collector-to-Base Voltage FPT510/FPT510A 60 V FPT530/FPT530A 50 V FPT550 I FPT550A 30 V VCE(sus) Collector-to-Emitter Sustaining Voltage FPT510/FPT510A 45 V FPT530/FPT530A 30V FPT550 I FPT550A 12 V IC Collector Current 50mA Package Outline .230 (5.842) !---_t-.209 (5.309) .19514.953) CIA .17814.521)-tt---I CIA k--<=qI=T==* .030 .020 (0.508) 10.762) .21015.334) .010 (0.254) T SeatingMAL.Xi.III:;;==;;=~ .17014.31.
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