This device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. Datasheet − production data 3 2 1 TO-.
■ Low spread of dynamic parameters
■ Minimum lot-to-lot spread for reliable operation
■ Very high switching speed
Applications
■ Electronic ballast for fluorescent lighting
■ Switch mode power supplies
Description
This device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA.
Datasheet − production data
3 2 1
TO-220 Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
Marking.
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