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2SB707 Datasheet

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2SB707 PNP Transistor

·High Collector Current: IC= -7A ·Low Collector Saturation Voltage : VCE(sat)= -0.5V(Max)@IC= -5A ·Complement to Type 2SD568 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low-frequency power amplifiers and low-speed switching applicati.

Features

akdown Voltage IC= -10mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A VBE(sat) Base-Emitter Saturation Voltage IC= -5A; IB= -0.5A ICBO Collector Cutoff Current VCB= -60V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -3A ; VCE= -1V hFE-2 DC Current Gain IC= -5A ; VCE= -1V
 hFE-1 Classifications M L K 40-80 60-120 100-200 2SB707 MIN TYP. MAX UNIT -60 V -0.5 V -1.5 V -10 μA -10 μA 40 200 20 NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notificatio.

2SB707 2SB707 2SB707

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