C4805 Datasheet

C4805 Silicon NPN Transistor

Transistors 2SC4805 Silicon NPN epitaxial planar type For 2 GHz band low-noise amplification Unit: mm (0.425) 0.3+–00..01 ■ Features 3 • High transition frequency fT • S-Mini type package, allowing downsizing of the equipment and 0.15+–00..0150 1.25±0.10 2.1±0.1 5˚ automatic insertion through.

Features

3
• High transition frequency fT
• S-Mini type package, allowing downsizing of the equipment and 0.15+
  –00..0150 1.25±0.10 2.1±0.1 5˚ automatic insertion through the tape packing and the magazine packing 1 2 (0.65) (0.65) 1.3±0.1 /
■ Absolute Maximum Ratings Ta = 25°C 2.0±0.2 Parameter Symbol Rating Unit e pe) Collector-base voltage (Emitter open) VCBO 15 0.2±0.1 V c e. d ty Collector-emitter voltage (Base open) VCEO 10 V n d stag tinue Emitter-base voltage (Collector open) VEBO 2 0 to 0.1 0.9±0.1 0.9
  –+00..12 V a e cle con Collector current IC 65 mA lifecy , dis Coll.