FJV3108R Datasheet

FJV3108R NPN Epitaxial Silicon Transistor

FJV3108R FJV3108R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=47KΩ, R2=22KΩ) • Complement to FJV4108R 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Marking Equivalent Circuit C R28 NPN Epitaxial Sili.

Features

Input On Voltage Input Resistor Resistor Ratio Test Condition IC=10µA, IE=0 IC=100µΑ, IB=0 VCB=40V, IE=0 VCE=5V, IC=5mA IC=10mA, IB=0.5mA IC=10mA, IB=0.5mA VCB=10V, IE=0 f=1.0MHz VCE=5V, IC=100µA VCE=0.3V, IC=2mA 32 1.9 47 2.1 0.8 4 62 2.4 250 3.7 56 0.3 V MHz pF V V KΩ Min. 50 50 0.1 Typ. Max. Units V V µA ©2002 Fairchild Semiconductor Corporation Rev. A, August 2002 FJV3108R Typical Characteristics 1000 100 VCE = 5V R1 = 47K R2 = 22K VCE = 0.3V R1 = 47K R2 = 22K VI(on)[V], INPUT VOLTAGE hFE, DC CURRENT GAIN 10 100 1 10 1 10 100 1000 0.1 0.1 1 10 100 IC[mA], COLLECTOR CURR.