FJV4112R Datasheet

FJV4112R PNP Epitaxial Silicon Transistor

FJV4112R FJV4112R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R=47KΩ) • Complement to FJV3112R 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Equivalent Circuit C Marking R B R8 2 PNP Epitaxial Silicon .

Features

IC= -1mA, IB=0 VCB= -30V, IE=0 VCE= -5V, IC= -1mA IC= -10mA, IB= -1mA VCB= -10V, IE=0 f=1MHz VCE= -10V, IC= -5mA 32 5.5 200 47 62 100 Min. -40 -40 -0.1 600 -0.3 V pF MHz KΩ Typ. Max. Units V V µA ©2002 Fairchild Semiconductor Corporation Rev. A, August 2002 FJV4112R Package Dimensions SOT-23 0.20 MIN 2.40 ±0.10 0.40 ±0.03 1.30 ±0.10 0.45~0.60 0.03~0.10 0.38 REF 0.40 ±0.03 0.96~1.14 2.90 ±0.10 0.12
  –0.023 +0.05 0.95 ±0.03 0.95 ±0.03 1.90 ±0.03 0.508REF 0.97REF Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A, August 2002 TRADEMARKS The following are re.