HY29LV800B-55I Datasheet

HY29LV800B-55I 8 Mbit (1M x 8/512K x 16) Low Voltage Flash Memory

The HY29LV800 is an 8 Mbit, 3 volt-only, CMOS Flash memory organized as 1,048,576 (1M) bytes or 524,288 (512K) words that is available in 44pin PSOP, 48-pin TSOP and 48-ball FBGA packages. Word-wide data (x16) appears on DQ[15:0] and byte-wide (x8) data appears on DQ[7:0]. The HY29LV800 can be progr.

Features

n Single Power Supply Operation
  – Read, program and erase operations from 2.7 to 3.6 volts
  – Ideal for battery-powered applications High Performance
  – 70 and 90 ns access time versions for full voltage range operation
  – 55 ns access time version for operation from 3.0 to 3.6 volts Ultra-low Power Consumption (Typical Values)
  – Automatic sleep mode current: 0.2 µA
  – Standby mode current: 0.2 µA
  – Read current: 7 mA (at 5 Mhz)
  – Program/erase current: 15 mA Flexible Sector Architecture:
  – One 16 KB, two 8 KB, one 32 KB and fifteen 64 KB sectors in byte mode
  – One 8 KW, two 4 KW, one 16 KW and f.