NEL2012F03-24 Datasheet

NEL2012F03-24 NPN SILICON EPITAXIAL TRANSISTOR L BAND POWER AMPLIFIER

The NEL2012F03-24 of NPN epitaxial microwave power transistors is designed for 1.8 GHz-2.0 GHz PCN/PCS/ PHS base station applications. It is corporate emitter ballast resistors, gold metalizations and offers a high degree of reliability. FEATURES High Linear Power and Gain Low Internal Modulation D.

Features

High Linear Power and Gain Low Internal Modulation Distortion High Reliability Gold Metalization Emitter Ballasting 24 V Operation APPLICATION Digital Cellular : PCN/PCS etc. Digital Cordless : PHS etc. ORDERING INFORMATION Part Number NEL2012F03-24 Package Outline F03 PACKAGE DIMENSIONS (Unit: mm) 2.8 ± 0.2 6.35 ± 0.4 PIN CONNECTIONS 1. EMITTER 2. BASE 3. COLLECTOR 14.35 ± 0.4 4.67 ± 0.4 2 × φ 3.3 ± 0.3 1 2 3 2.17 ± 0.3 0.1+0.05
  –0.02 18.9 ± 0.3 14.2 ± 0.3 6.35 ± 0.4 The information in this document is subject to change without notice. Document No. P11768EJ1V0DS00 (1st edition) Date .