D . The FLM5964-25F is a power GaAs FET that is internally matched for w standard communication bands to provide optimum power and gain in a w 50 ohm system. Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Condi.
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• High Output Power: P1dB = 44.5dBm (Typ.) U
• High Gain: G1dB = 10.0dB (Typ.) 4 t
• High PAE: ηadd = 37% (Typ.) e = 33.5dBm
• Low IM3 = -46dBc@Po e
• Broad Band: 5.9h ~ 6.4GHz S
• Impedance Matched Zin/Zout = 50Ω aSealed Package t
• Hermetically a DESCRIPTION D . The FLM5964-25F is a power GaAs FET that is internally matched for w standard communication bands to provide optimum power and gain in a w 50 ohm system.
Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Condition
FLM5964-25F
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