CEB41A2 Datasheet

CEB41A2 N-Channel MOSFET

CEP41A2/CEB41A2 N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 40A, RDS(ON) =20mΩ @VGS = 4.5V. RDS(ON) =30mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D D .

Features

20V, 40A, RDS(ON) =20mΩ @VGS = 4.5V. RDS(ON) =30mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD-PAK) G G D S CEP SERIES TO-220 S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 20 Units V V A A W W/ C C ±12 40 120 60 0.4 -55 to 175 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Op.