www.DataSheet4U.com w w a D . w S a t e e h U 4 t m o .c STP36N06 STP36N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR R DS(on) < 0.04 Ω < 0.04 Ω ID 36 A 21 A TYPE VDSS 60 V 60 V STP36N06 STP36N06FI s s s s s s s s TYPICAL RDS(on) = 0.03 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANC.
o C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature
o
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Parameter
t a .D
S a
e h
INTERNAL SCHEMATIC DIAGRAM
U 4 t e
1
2
.c
m o
1
3 2
ISOWATT220
Value STP36N06 60 60 ± 20 36 25 144 120 0.8 -65 to 175 175 21 14 144 40 0.27 2000 STP36N06FI
Unit
V V V A A A
(
•) Pulse width limited by safe operating area
December 1996
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.D
a t a
Sh
ee
U 4 t
W/o C V
o o
W
m o .c
C C
1/10
STP36N06/FI
www.DataSheet4U.com
THERMAL DATA
TO-220 R thj-case R thj-amb R t hc-sink Tl Thermal Resistance Junction-case Max 1.25.
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