Preliminary Technical Information GenX3TM 600V IGBT With Diode High Speed PT IGBTs for 40-100kHz switching IXGA30N60C3D4 IXGP30N60C3D4 VCES = IC110 = VCE(sat) ≤ tfi(typ) = 600V 30A 3.0V 47ns TO-263 (IXGA) Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight .
G C C(TAB) E G E C(TAB) TO-220 (IXGP) G = Gate E = Emitter C = Collector TAB = Collector 1.6mm (0.062 in.) from case for 10s Plastic body for 10 seconds Mounting torque (TO-220) TO-220 TO-263 300 260 1.13/10 2.5 3.0 Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVCES VGE(th) ICES IGES VCE(sat) IC = 250μA, VGE = 0V IC = 250μA, VCE = VGE VCE = VCES VGE = 0V VCE = 0V, VGE = ± 20V IC = 20A, VGE = 15V, Note 1 TJ = 125°C TJ = 125°C Characteristic Values Min. 600 3.5 5.5 Typ. Max. V V 75 μA 500 μA ±100 nA 2.6 1.8 3.0 V V Applications High Frequency Power Inverters UPS Motor Dr.
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