PROCESS Power Transistor CP611 PNP - Amp/Switch Transistor Chip www.DataSheet4U.com PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 1,300 PRINCIPAL DEVICE TYPES CJD42C .
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No. | Part # | Manufacture | Description | Datasheet |
---|---|---|---|---|
1 | CP600 |
Pan Jit International Inc. |
SINGLE-PHASE SILICON BRIDGE-P.C. MTG 3A / HEAT-SINK MTG 6A(VOLTAGE 50 to 1000 Volts CURRENT - P.C. MTG 3A / HEAT-SINK MTG 6A) | |
2 | CP600 |
TRSYS |
SINGLE-PHASE SILICON BRIDGE-P.C. MTG 3A/ HEAR-SINK MTG 6A | |
3 | CP601 |
Pan Jit International Inc. |
SINGLE-PHASE SILICON BRIDGE-P.C. MTG 3A / HEAT-SINK MTG 6A(VOLTAGE 50 to 1000 Volts CURRENT - P.C. MTG 3A / HEAT-SINK MTG 6A) | |
4 | CP601 |
TRSYS |
SINGLE-PHASE SILICON BRIDGE-P.C. MTG 3A/ HEAR-SINK MTG 6A | |
5 | CP6010 |
Pan Jit International Inc. |
SINGLE-PHASE SILICON BRIDGE-P.C. MTG 3A / HEAT-SINK MTG 6A(VOLTAGE 50 to 1000 Volts CURRENT - P.C. MTG 3A / HEAT-SINK MTG 6A) |