2SB936 Datasheet

2SB936 PNP Transistor

Power Transistors 2SB936, 2SB936A Silicon PNP epitaxial planar type For low-voltage switching 10.0±0.3 8.5±0.2 6.0±0.5 3.4±0.3 Unit: mm 1.0±0.1 s Features q q q Low collector to emitter saturation voltage VCE(sat) High-speed switching N type package enabling direct soldering of the radiating fin.

Features

q q q Low collector to emitter saturation voltage VCE(sat) High-speed switching N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 1.5±0.1 1.5max. 1.1max. 10.5min. 2.0 0.8±0.1 0.5max. s 2.54±0.3 Absolute Maximum Ratings (TC=25˚C) Parameter Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings
  –40
  –50
  –20
  –40
  –5
  –20
  –10 40 1.3 150
  –55 to +150 Unit V 2SB936 2SB936A 2SB936 5.08±0.5 1 2 3 Collector to base voltage Collector to 1:Base 2:Collector 3:Emitter N Type Package Unit: mm 3.4±0.3 1.0±0.1 8.5±0.2 6.0±0.3 e.