SIS438DN Datasheet

SIS438DN N-Channel MOSFET

New Product SiS438DN Vishay Siliconix N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) 0.0095 at VGS = 10 V 0.0125 at VGS = 4.5 V ID (A)a, g 16 7.3 nC 16 Qg (Typ.) FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Gen III Power MOSFET • 100 % Rg Tested .

Features

• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Gen III Power MOSFET
• 100 % Rg Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC PowerPAK® 1212-8 APPLICATIONS 3.30 mm S 1 2 3 4 D 8 7 6 5 D D D S S G 3.30 mm
• DC/DC Conversion
• POL D G Bottom View Ordering Information: SiS438DN-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Avalanche Current Avalanche Energy TC = 25 °.