MBRT200100R Datasheet

MBRT200100R (MBRT20045 - MBRT200100R) Silicon Power Schottky Diode

MBRT20045 thru MBRT200100R Silicon Power Schottky Diode Features • High Surge Capability • Types up to 100 V VRRM • Isolation Type Package Three Tower Package VRRM = 20 V - 100 V IF = 200 A Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Repet.

Features

• High Surge Capability
• Types up to 100 V VRRM
• Isolation Type Package Three Tower Package VRRM = 20 V - 100 V IF = 200 A Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Repetitive p p peak reverse voltage g RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature Symbol VRRM VRMS VDC IF IF,SM Tj Tstg TC ≤ 125 °C TC = 25 °C, tp = 8.3 ms Conditions MBRT20045 (R) MBRT20060 (R) MBRT20080 (R) MBRT200100 (R) Unit 45 32 45 200 1500 -40 t.