HFF630 Datasheet

HFF630 N-Channel MOSFET

Shantou Huashan Electronic Devices Co.,Ltd. N-Channel MOSFET HFF630 APPLICATIONSL High Voltage High-Speed Switching. ABSOLUTE MAXIMUM RATINGS Ta=25 Tstg Storage Temperature Tj Operating Junction Temperature PD Allowable Power Dissipation Tc=25 VDSS Drain-Source Voltage VDGR Drain-Gate Vol.

Features

ate
  –Source Charge 3.6 Qgd Gate
  –Drain Charge 10.2 Is Continuous Source Current VSD Rth j-c Diode Forward Voltage Thermal Resistance Junction-to-Case *Pulse Test Pulse Width 300 s Duty Cycle 2% Max Unit Test Conditions V ID=250 A ,VGS=0V VDS =200V VGS=0 100 VGS= 30V , VDS =0V 4.0 V VDS = VGS , ID =250 A ? VGS=10V, ID =4.5A S VDS = 40V , ID =4.5A * pF 110 pF 29 pF 30 nS 150 nS 130 nS 140 nS 29 nC VDS =25V, VGS=0,f=1 VDD =100V, ID =9A RG= 25 * nC nC IS =9.0A , VGS=0 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel MOSFET HFF630 Shantou Huashan Electronic Devices Co.,Ltd. N-.