. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2 PIN DESCRIPTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 3 REGISTER & MEMORY MAP . . . . .
■ Memories
– 16K to 60K dual voltage High Density Flash (HDFlash) or up to 32K ROM with read-out protection capability. In-Application Programming and In-Circuit Programming for HDFlash devices
– 512 to 2048 bytes RAM
– HDFlash endurance: 100 cycles, data reten-
tion: 40 years at 85°C
■ Clock, reset and supply management
– Enhanced low voltage supervisor (LVD) for main supply and auxiliary voltage detector (AVD) with interrupt capability
– Clock sources: crystal/ceramic resonator oscillators, internal RC oscillator and bypass for external clock
– PLL for 2x frequency multiplication
– Four Powe.
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