NCE2008E Datasheet

NCE2008E NCE N-Channel Enhancement Mode Power MOSFET

The NCE2008E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features ● VDS = 20V,ID =6A RDS(ON) < 30mΩ @ VGS=2.5V RDS.

Features

● VDS = 20V,ID =6A RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 24mΩ @ VGS=4.5V ESD Rating: 2000V HBM
● High power and current handing capability
● Lead free product is acquired
● Surface mount package Schematic diagram Marking and pin assignment Application
● PWM application
● Load switch TSSOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package 2008E NCE2008E TSSOP-8 Reel Size Ø330mm Tape width 12mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drai.