K536 Datasheet

K536 2SK536

Ordering number:EN2550 N-Channel Enhancement MOS Silicon FET 2SK536 Analog Switch Applications Features · Large yfs. · Enhancement type. · Low ON-state resistance. Package Dimensions unit:mm 2024B [2SK536] 0.4 3 0.16 0 to 0.1 0.5 1.5 0.5 2.5 1 0.95 0.95 2 1.9 2.9 Specifications Absolut.

Features

· Large yfs.
· Enhancement type.
· Low ON-state resistance. Package Dimensions unit:mm 2024B [2SK536] 0.4 3 0.16 0 to 0.1 0.5 1.5 0.5 2.5 1 0.95 0.95 2 1.9 2.9 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current Drain Current(Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDS VGS ID IDP PD Tch Tstg Electrical Characteristics at Ta = 25˚C Conditions Parameter Drain-to-Source Breakdown Voltage Gate-to-Source Leakage Current Zero-Gate Voltage Drain Current Cutoff Voltage For.