1SS391 Datasheet

1SS391 Silicon Diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS391 Low Voltage High Speed Switching  Low forward voltage: VF (2) = 0.23V (typ.)  Small package: SC-61 1SS391 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 15 V .

Features

emperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: Unit rating. Total rating = unit rating × 1.5 Electrical Characteristics (Ta = 25°C) Characteristic Forward voltage Reverse current Total capacitance Symbol VF (1) VF (2) VF (3) IR CT Test Condition IF = 1mA IF = 5mA IF = 100mA VR = 10V VR = 0V , f = 1MHz .