KF6N60F Datasheet

KF6N60F N-CHANNEL MOS FIELD EFFECT TRANSISTOR

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS(Min.)= 600V, ID= 6A RDS(ON)=1.4 (Max) @VGS =10V.

Features

VDSS(Min.)= 600V, ID= 6A RDS(ON)=1.4 (Max) @VGS =10V Qg(typ.) =16nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above25 SYMBOL VDSS VGSS ID RATING KF6N60P KF6N60F 600 30 6 6* 3.8 3.8* IDP 15 15* EAS 180 EAR 4 dv/dt 4.5 100 41.7 PD 0.8 0.33 Maximum Junction Temperature Storage Temperature Range Tj Tstg 150 -55 150 Thermal Characteristics Thermal .