KTK5133S Datasheet

KTK5133S N-CHANNEL MOS FIELD EFFECT TRANSISTOR

SEMICONDUCTOR TECHNICAL DATA ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS FEATURES 2.5 Gate Drive. Low Threshold Voltage : Vth=0.5 High Speed. Small Package. Enhancement-Mode. 1.5V. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Drain-Source Voltage VDS Gate-Source Volt.

Features

2.5 Gate Drive. Low Threshold Voltage : Vth=0.5 High Speed. Small Package. Enhancement-Mode. 1.5V. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGSS DC Drain Current ID Drain Power Dissipation PD Channel Temperature Tch Storage Temperature Range Tstg EQUIVALENT CIRCUIT D RATING 30 20 150 200 150 -55 150 UNIT V V mA mW G KTK5133S N CHANNEL MOS FIELD EFFECT TRANSISTOR E L BL DIM MILLIMETERS A 2.93+_ 0.20 B 1.30+0.20/-0.15 A G H D 23 C 1.30 MAX D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00.