FE3B

VISHAY Ultra Fast Sinterglass Diode \ Features High temperature metallurgically bonded construction Cavity-free glass passivated junction Superfast recovery time for high efficiency Low forward voltage, high current capability Hermetically sealed package Low leakage current High surge current capability FE3A to FE3D Vishay Semiconductors 17133 Mechanical Data Case: Sintered glass case, G4 Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Parts Table Part FE3A FE3B FE3C FE3D VRRM = 50 V VRRM = 100 V VRRM = 150 V VRRM = 200 V Type differentiation Polarity: Color band denotes cathode end Mounting Position: Any Weight: 1040 mg Package G4 G4 G4 G4 Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Reverse voltage = Repetitive peak reverse voltage Test condition see electrical characteristics see electrical characteristics see electrical characteristics see electrical characteristics Maximum average forward rectified current Peak forward surge current Operating junction and storage temperature range 0.375 " (9.5 mm) lead length at Tamb = 75 °C 8.3 ms single half sine-wave superimposed on rated load (JEDEC Method) Part FE3A FE3B FE3C FE3D Symbol VR = VRRM VR = VRRM VR = VRRM VR = VRRM IF(AV) IFSM Value 50 100 150 200 3.0 125 TJ, - 55 to + TSTG 175 Unit V V V V A A °C Document Number 86070 Rev. 2, 28-Jan-03 www.vishay.com 1 FE3A to FE3D Vishay Semiconductors VISHAY Maximum Thermal Resistance Tamb =...