DatasheetsPDF.com

ACJT105 Dataheets PDF



Part Number ACJT105
Manufacturers JIEJIE
Logo JIEJIE
Description TRIACs
Datasheet ACJT105 DatasheetACJT105 Datasheet (PDF)

JIEJIE MICROELECTRONICS CO. , Ltd ACJT1 Series 1A TRIACs Rev.3.0 DESCRIPTION: ACJT1 series triacs with high ability to withstand the shock loading of large current provide high dv/dt rate with strong resistance to electromagnetic interference. They are especially recommended for use on inductive load and serious electromagnetic interference place. 12 3 SOT-89 12 3 SOT-223 MAIN FEATURES Symbol Value Unit 1 32 TO-92 IT(RMS) VDRM /VRRM 1 1000 A T2(2) V IGT ≤5 or ≤10 mA T1(1) G(3) AB.

  ACJT105   ACJT105


Document
JIEJIE MICROELECTRONICS CO. , Ltd ACJT1 Series 1A TRIACs Rev.3.0 DESCRIPTION: ACJT1 series triacs with high ability to withstand the shock loading of large current provide high dv/dt rate with strong resistance to electromagnetic interference. They are especially recommended for use on inductive load and serious electromagnetic interference place. 12 3 SOT-89 12 3 SOT-223 MAIN FEATURES Symbol Value Unit 1 32 TO-92 IT(RMS) VDRM /VRRM 1 1000 A T2(2) V IGT ≤5 or ≤10 mA T1(1) G(3) ABSOLUTE MAXIMUM RATINGS Parameter Symbol Storage junction temperature range Tstg Operating junction temperature range Repetitive peak off-state voltage( Tj=25℃) Repetitive peak reverse voltage( Tj=25℃) Tj VDRM VRRM Non repetitive surge peak Off-state voltage VDSM Non repetitive peak reverse voltage RMS on-state current SOT-89/ SOT-223 (TC=70℃) TO-92 (TC=57℃) Non repetitive surge peak on-state current ( full cycle, F=50Hz) I2t value for fusing ( tp=10ms) VRSM IT(RMS) ITSM I2t Rate of rise of on-state current (IG=2×IGT) Peak gate current dIT/dt IGM Average gate power dissipation PG(AV) Value -40-150 -40-125 1000 1000 VDRM +100 VRRM +100 1 10 1.12 50 1 0.2 Unit ℃ ℃ V V V V A A A2s A/μs A W TEL:+86-513-83639777 - 1 / 5- http://www.jjwdz.com ACJT1 Series Peak gate power JieJie Microelectronics CO. , Ltd PGM 1 W ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified) Symbol Test Condition IGT VD=12V RL=33Ω VGT VGD VD=VDRM Tj=125℃ RL=3.3KΩ IL IG=1.2IGT Quadrant Ⅰ-Ⅱ-Ⅲ Ⅰ-Ⅱ-Ⅲ Ⅰ-Ⅱ-Ⅲ Ⅰ-Ⅲ Ⅱ MAX MAX Value ACJT105 ACJT110 5 10 1.4 1.5 Unit mA V MIN 0.2 V MAX 15 25 25 mA 35 IH dV/dt IT=100mA VD=2/3VDRM Gate Open Tj=125℃ MAX MIN 10 400 20 mA 600 V/μs STATIC CHARACTERISTICS Symbol Parameter VTM ITM=1.4A tp=380μs Tj=25℃ IDRM IRRM VD=VDRM VR=VRRM Tj=25℃ Tj=125℃ Value(MAX) 1.5 10 0.5 Unit V μA mA THERMAL RESISTANCES Symbol Parameter TO-92 Rth(j-c) junction to case(AC) SOT-223 SOT-89 Value 60 31 44 Unit ℃/W TEL:+86-513-83639777 - 2 / 5- http://www.jjwdz.com ACJT1 Series ORDERING INFORMATION AC J T 1 AC switch JieJie Microelectronics Co.,Ltd Triacs IT(RMS):1A JieJie Microelectronics CO. , Ltd 05 -10 U V:SOT-223 U:TO-92 N:SOT-89 10:VDRM /VRRM≥1000V 05: IGT1-3≤5mA 10: IGT1-3≤10mA PACKAGE MECHANICAL DATA TEL:+86-513-83639777 - 3 / 5- http://www.jjwdz.com H C N F P B K ACJT1 Series PACKAGE MECHANICAL DATA N V A Φ Max 1.5mm E DJ G TO-92 JieJie Microelectronics CO. , Ltd Dimensions Ref. Millimeters Inches Min. Typ. Max. Min. Typ. Max. A 4.45 5.20 0.175 0.205 B 4.32 5.33 0.170 0.210 C 3.18 4.19 0.125 0.165 D 0.407 0.533 0.016 0.021 E 0.60 0.80 0.024 0.031 F - 1.1 - - 0.043 - G - 1.27 - - 0.050 - H - 2.30 - - 0.091 - J 0.36 0.50 0.014 0.020 K 12.70 15.0 0.500 0.591 N 2.04 2.66 0.080 0.105 P 1.86 2.06 0.073 0.081 V- 4.3 - 0.169 FIG.1 Maximum power dissipation versus RMS on-state current P(w) 1.5 1.0 FIG.2: RMS on-state current versus case temperature IT(RMS) (A) 1.5 α=180° 1.0 TO-92 SOT-89/ SOT-223 0.5 0.5 0 IT(RMS) (A) 0 0.2 0.4 0.6 0.8 1.0 FIG.3: Surge peak on-state current versus number of cycles ITSM (A) 14 12 t=20ms One cycle 10 8 6 4 2 0 Number of cycles 1 10 100 1000 0 Tc (℃) 0 25 50 75 100 125 FIG.4: On-state characteristics (maximum values) ITM (A) 2.0 1.5 Tj=125℃ 1.0 Tj=25℃ 0.5 0 VTM (V) 0 0.5 1.0 1.5 2.0 2.5 TEL:+86-513-83639777 - 4 / 5- http://www.jjwdz.com ACJT1 Series FIG.5: Relative variations of gate trigger current versus junction temperature IGT(Tj) /IGT(Tj=25℃) 3.0 2.5 2.0 IGT3 1.5 IGT1&IGT2 1.0 0.5 0.0 Tj (℃) -40 -20 0 20 40 60 80 100 120 140 JieJie Microelectronics CO. , Ltd FIG.6: Relative variations of holding current, latching curretn versus junction temperature IH,IL(Tj) /IH,IL(Tj=25℃) 3.0 2.5 2.0 IH IL 1.5 1.0 0.5 0.0 -40 -20 0 Tj (℃) 20 40 60 80 100 120 140 Information furnished in this document is believed to be accurate and reliable. However, Jiangsu JieJie Microelectronics Co.,Ltd assumes no responsibility for the consequences of use without consideration for such information nor use beyond it. Information mentioned in this document is subject to change without notice, apart from that when an agreement is signed, Jiangsu JieJie complies with the agreement. Products and information provided in this document have no infringement of patents. Jiangsu JieJie assumes no responsibility for any infringement of other rights of third parties which may result from the use of such products and information. This document is the third version which is made in 22-June-2015. This document supersedes and replaces all information previously supplied. is a registered trademark of Jiangsu JieJie Microelectronics Co.,Ltd. Copyright © 2015 Jiangsu JieJie Microelectronics Co.,Ltd. Printed All rights reserved. TEL:+86-513-83639777 - 5 / 5- http://www.jjwdz.com .


ACJT1 ACJT105 ACJT110


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)