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JIEJIE MICROELECTRONICS CO. , Ltd
ACJT1 Series 1A TRIACs
Rev.3.0
DESCRIPTION:
ACJT1 series triacs with high ability to withstand the shock loading of large current provide high dv/dt rate with strong resistance to electromagnetic interference. They are especially recommended for use on inductive load and serious electromagnetic interference place.
12 3 SOT-89
12 3 SOT-223
MAIN FEATURES
Symbol
Value
Unit
1 32
TO-92
IT(RMS) VDRM /VRRM
1 1000
A
T2(2)
V
IGT ≤5 or ≤10 mA
T1(1) G(3)
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Storage junction temperature range
Tstg
Operating junction temperature range Repetitive peak off-state voltage( Tj=25℃) Repetitive peak reverse voltage( Tj=25℃)
Tj VDRM VRRM
Non repetitive surge peak Off-state voltage VDSM
Non repetitive peak reverse voltage
RMS on-state current
SOT-89/ SOT-223 (TC=70℃)
TO-92 (TC=57℃)
Non repetitive surge peak on-state current ( full cycle, F=50Hz) I2t value for fusing ( tp=10ms)
VRSM IT(RMS)
ITSM I2t
Rate of rise of on-state current (IG=2×IGT) Peak gate current
dIT/dt IGM
Average gate power dissipation
PG(AV)
Value -40-150 -40-125
1000 1000 VDRM +100 VRRM +100
1
10 1.12 50
1 0.2
Unit ℃ ℃ V V V V
A
A A2s A/μs A W
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ACJT1 Series
Peak gate power
JieJie Microelectronics CO. , Ltd
PGM 1 W
ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified)
Symbol Test Condition
IGT VD=12V RL=33Ω VGT
VGD
VD=VDRM Tj=125℃ RL=3.3KΩ
IL IG=1.2IGT
Quadrant
Ⅰ-Ⅱ-Ⅲ Ⅰ-Ⅱ-Ⅲ Ⅰ-Ⅱ-Ⅲ
Ⅰ-Ⅲ Ⅱ
MAX MAX
Value ACJT105 ACJT110
5 10 1.4 1.5
Unit
mA V
MIN 0.2
V
MAX
15 25
25 mA
35
IH dV/dt
IT=100mA VD=2/3VDRM Gate Open Tj=125℃
MAX MIN
10 400
20 mA 600 V/μs
STATIC CHARACTERISTICS
Symbol
Parameter
VTM ITM=1.4A tp=380μs
Tj=25℃
IDRM IRRM
VD=VDRM VR=VRRM
Tj=25℃ Tj=125℃
Value(MAX) 1.5 10 0.5
Unit V μA mA
THERMAL RESISTANCES
Symbol
Parameter
TO-92
Rth(j-c) junction to case(AC)
SOT-223
SOT-89
Value 60 31 44
Unit ℃/W
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ACJT1 Series
ORDERING INFORMATION
AC J T 1
AC switch JieJie Microelectronics Co.,Ltd
Triacs IT(RMS):1A
JieJie Microelectronics CO. , Ltd
05 -10 U
V:SOT-223 U:TO-92 N:SOT-89 10:VDRM /VRRM≥1000V 05: IGT1-3≤5mA 10: IGT1-3≤10mA
PACKAGE MECHANICAL DATA
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H
C N F
P B
K
ACJT1 Series
PACKAGE MECHANICAL DATA
N
V A Φ Max 1.5mm
E
DJ G
TO-92
JieJie Microelectronics CO. , Ltd
Dimensions
Ref. Millimeters
Inches
Min. Typ. Max. Min. Typ. Max.
A 4.45
5.20 0.175
0.205
B 4.32
5.33 0.170
0.210
C 3.18
4.19 0.125
0.165
D 0.407
0.533 0.016
0.021
E 0.60
0.80 0.024
0.031
F - 1.1 - - 0.043 -
G - 1.27 -
- 0.050 -
H - 2.30 -
- 0.091 -
J 0.36
0.50 0.014
0.020
K 12.70
15.0 0.500
0.591
N 2.04
2.66 0.080
0.105
P 1.86
2.06 0.073
0.081
V-
4.3 -
0.169
FIG.1 Maximum power dissipation versus RMS on-state current
P(w) 1.5
1.0
FIG.2: RMS on-state current versus case
temperature
IT(RMS) (A) 1.5
α=180°
1.0
TO-92
SOT-89/ SOT-223
0.5 0.5
0 IT(RMS) (A) 0 0.2 0.4 0.6 0.8 1.0
FIG.3: Surge peak on-state current versus number of cycles
ITSM (A) 14
12
t=20ms One cycle
10 8 6 4
2 0 Number of cycles 1 10 100
1000
0 Tc (℃) 0 25 50 75 100 125
FIG.4: On-state characteristics (maximum values)
ITM (A) 2.0
1.5
Tj=125℃
1.0
Tj=25℃
0.5
0 VTM (V)
0
0.5
1.0 1.5
2.0 2.5
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ACJT1 Series
FIG.5: Relative variations of gate trigger current versus junction temperature
IGT(Tj) /IGT(Tj=25℃) 3.0
2.5
2.0 IGT3
1.5 IGT1&IGT2 1.0
0.5 0.0 Tj (℃)
-40 -20 0 20 40 60 80 100 120 140
JieJie Microelectronics CO. , Ltd
FIG.6: Relative variations of holding current, latching curretn versus junction temperature
IH,IL(Tj) /IH,IL(Tj=25℃) 3.0
2.5
2.0 IH IL
1.5
1.0
0.5
0.0 -40 -20 0
Tj (℃) 20 40 60 80 100 120 140
Information furnished in this document is believed to be accurate and reliable. However, Jiangsu JieJie Microelectronics Co.,Ltd assumes no responsibility for the consequences of use without consideration for such information nor use beyond it. Information mentioned in this document is subject to change without notice, apart from that when an agreement is signed, Jiangsu JieJie complies with the agreement. Products and information provided in this document have no infringement of patents. Jiangsu JieJie assumes no responsibility for any infringement of other rights of third parties which may result from the use of such products and information. This document is the third version which is made in 22-June-2015. This document supersedes and replaces all information previously supplied.
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