Document
JIEJIE MICROELECTRONICS CO. , Ltd
ACJT16 Series 16A TRIACs
Rev.3.0
DESCRIPTION:
The ACJT16 series of double mesa technology provide high
interference immunity, They can be used as an static ON/OFF
function in electrical control system, and used as a driver of
low power and high inductance or resistive loads, such as jet pumps of dishwashers, fans of air-conditioner ...
12 3
ACJT16xx-xxA provides insulation voltage rated at 2500V
RMS and ACJT16xx-xxF provides insulation voltage rated at
2000V RMS from all three terminals to external heatsink.
TO-220A Insulated
1 23
TO-220B
Non-Insulated
MAIN FEATURES
Symbol IT(RMS) VDRM /VRRM
IGT
Value 16
1000 ≤10 or ≤35 or ≤50
Unit A V mA
123
TO-220F Insulated
T2(2)
T1(1) G(3)
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Storage junction temperature range
Tstg
Operating junction temperature range Repetitive peak off-state voltage( Tj=25℃) Repetitive peak reverse voltage( Tj=25℃) Non repetitive surge peak Off-state voltage
Tj VDRM VRRM VDSM
Non repetitive peak reverse voltage
TO-220A(Ins)/
RMS on-state TO-220F(Ins) (TC=92℃)
current
TO-220B(Non-Ins)
(TC=103℃)
Non repetitive surge peak on-state current
(full cycle, F=50Hz)
I2t value for fusing ( tp=10ms)
VRSM IT(RMS)
ITSM I2t
Rate of rise of on-state current (IG=2×IGT)
dIT/dt
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Value -40-150 -40-125
1000 1000 VDRM +100 VRRM +100
16
Unit ℃ ℃ V V V V
A
160 128 50
A A2s A/μs
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ACJT16 Series
Peak gate current Average gate power dissipation Peak gate power
JieJie Microelectronics CO. , Ltd
IGM PG(AV) PGM
4 1 5
A W W
ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified)
Symbol Test Condition Quadrant
Value Unit
ACJT1610 ACJT1635 ACJT1650
IGT VD=12V RL=33Ω VGT
Ⅰ-Ⅱ-Ⅲ Ⅰ-Ⅱ-Ⅲ
MAX MAX
VGD
VD=VDRM Tj=125℃ RL=3.3KΩ
Ⅰ-Ⅱ-Ⅲ
MIN
IL IG=1.2IGT
Ⅰ-Ⅲ Ⅱ
MAX
10
20 35
35 50 mA
1.5 V
0.2 V
60 70 mA
70 100
IH dV/dt
IT=100mA
VD=2/3VDRM Gate Open Tj=125℃
MAX MIN
20 1000
50 1500
60 2000
mA V/μs
STATIC CHARACTERISTICS
Symbol
Parameter
VTM ITM=22.5A tp=380μs
Tj=25℃
IDRM IRRM
VD=VDRM VR=VRRM
Tj=25℃ Tj=125℃
Value(MAX) 1.65 10 4
Unit V μA mA
THERMAL RESISTANCES
Symbol Rth(j-c)
Parameter
junction to case(AC)
TO-220A(Ins)/ TO-220F(Ins)
TO-220B(Non-Ins)
Value 3.9 2.8
Unit ℃/W
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ACJT16 Series
ORDERING INFORMATION
AC J T
AC switch JieJie Microelectronics Co.,Ltd
Triacs
16
IT(RMS):16A
JieJie Microelectronics CO. , Ltd
35 -10 F
A:TO-220A(Ins) F:TO-220F(Ins) B:TO-220B(Non-Ins) 10:VDRM /VRRM≥1000V 10: IGT1-3≤10mA 35: IGT1-3≤35mA 50: IGT1-3≤50mA
H L1
L3 D
V1 F
PACKAGE MECHANICAL DATA
E
Φ
Max
3.8mm C2
A
L2
B G
TO-220A Ins
C3 C
Dimensions
Ref. Millimeters
Inches
Min. Typ. Max. Min. Typ. Max.
A 4.40
4.60 0.173
0.181
B 0.61
0.88 0.024
0.035
C 0.46
0.70 0.018
0.028
C2 1.21
1.32 0.048
0.052
C3 2.40
2.72 0.094
0.107
D 8.60
9.70 0.339
0.382
E 9.80
10.4 0.386
0.409
F 6.55
6.95 0.258
0.274
G 2.54
0.1
H 28.0
29.8 1.102
1.173
L1 3.75
0.148
L2 1.14
1.70 0.045
0.067
L3 2.65
2.95 0.104
0.116
V1 45°
45°
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H L1
L3 D
V1 F
ACJT16 Series
PACKAGE MECHANICAL DATA
E
Max 3.8mm
A
Φ C2
JIE
L2
C3
B G
TO-220B Non-Ins
C
JieJie Microelectronics CO. , Ltd
Dimensions
Ref. Millimeters
Inches
Min. Typ. Max. Min. Typ. Max.
A 4.40
4.60 0.173
0.181
B 0.61
0.88 0.024
0.035
C 0.46
0.70 0.018
0.028
C2 1.21
1.32 0.048
0.052
C3 2.40
2.72 0.094
0.107
D 8.60
9.70 0.339
0.382
E 9.60
10.4 0.378
0.409
F 6.20
6.60 0.244
0.260
G 2.54
0.1
H 28.0
29.8 1.102
1.173
L1 3.75
0.148
L2 1.14
1.70 0.045
0.067
L3 2.65
2.95 0.104
0.116
V1 45°
45°
H L1
L3 DF
E
Φ Max 3.5mm
A C2
V1
C3 L2
B G
C
TO-220F Ins
Dimensions
Ref. Millimeters
Inches
Min. Typ. Max. Min. Typ. Max.
A 4.40
4.80 0.173
0.189
B 0.74 0.80 0.83 0.029 0.031 0.033
C 0.48
0.75 0.019
0.030
C2 2.40
2.70 0.094
0.106
C3 2.60
3.00 0.102
0.118
D 8.80
9.30 0.346
0.366
E 9.70
10.3 0.382
0.406
F 6.40
7.00 0.252
0.276
G 2.54
0.1
H 28.0
29.8 1.102
1.173
L1 3.63
0.143
L2 1.14
1.70 0.045
0.067
L3 3.30 V1 45°
0.130 45°
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ACJT16 Series
FIG.1 Maximum power dissipation versus RMS on-state current
P(w) 27
18
9
JieJie Microelectronics CO. , Ltd
FIG.2: RMS on-state current versus case
temperature
IT(RMS) (A) 24
α=180°
20
16
TO-220B (Non-Ins)
12
TO-220A(Ins)/ TO-220F(Ins)
8
0 IT(RMS) (A) 0 4 8 12 16
FIG.3: Surge peak on-state current versus number of cycles
ITSM (A)
20
160
t=20ms One cycle
120
80
4
0 Tc (℃) 0 25 50 75 100
FIG.4: On-state characteristics (maximum values)
ITM (A) 40
125
30
20
40
0 Number of cycles
1 10 100
1000
FIG.5: Relative variations of gate trigger current versus junction temperature
IGT(Tj) /IGT(Tj=25℃) 3.0
10
Tj=125℃ Tj=25℃
0 VTM (V) 0 0.5 1.0 1.5 2.0 2.5
FIG.6: Relative variations of holding .