CR3EM

MITSUBISHI SEMICONDUCTOR 〈THYRISTOR 〉 CR3EM LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE CR3EM OUTLINE DRAWING 1.0±0.5 Dimensions in mm TYPE NAME VOLTAGE CLASS 8 MAX 4 MAX 12 MIN 1.2±0.1 0.8 0.8 2.5 2.5 4.5 MAX 1.5 MIN 0.5 123 1.55±0.1 10 MAX 2 1 CATHODE 2 ANODE 3 GATE 1 IT (AV) ........................................................................ 0.6A VDRM ....................................................................... 400V IGT ..........................................................................30mA APPLICATION Automatic strobe flasher 3 TO-202 MAXIMUM RATINGS Symbol VRRM VRSM VR (DC) VDRM VDSM Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage Non-repetitive peak off-state voltage Voltage class 8 400 500 320 400 600 Unit V V V V V Symbol IT (RMS) IT (AV) ITSM I2t PGM PG (AV) VFGM VRGM IFGM Tj Tstg — Parameter RMS on-state current Average on-state current Surge on-state current I2t for fusing Conditions Commercial frequency, sine half wave, 180° conduction, Ta=43° C 60Hz sine half wave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Ratings 0.94 0.6 70 20 2.0 0.2 6 6 1 –40 ~ +125 –40 ~ +125 Unit A A A A2s W W V V A °C °C g Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperatu...