BARRIER RECTIFIER. SB1150 Datasheet

SB1150 RECTIFIER. Datasheet pdf. Equivalent

Part SB1150
Description SCHOTTKY BARRIER RECTIFIER
Feature DO-41 0.107 (2.7) 0.080 (2.0) DIA. 1.0 (25.4) MIN. 0.205 (5.2) 0.160(4.1) SB120 THRU SB1200 SCHOT.
Manufacture MDD
Datasheet
Download SB1150 Datasheet

DO-41 0.107 (2.7) 0.080 (2.0) DIA. 1.0 (25.4) MIN. 0.205 ( SB1150 Datasheet
ELECTRONIC SB140 ~ SB1200 Power Schottky Rectifier - 1Amp SB1150 Datasheet
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Recommendation Recommendation Datasheet SB1150 Datasheet





SB1150
DO-41
0.107 (2.7)
0.080 (2.0)
DIA.
1.0 (25.4)
MIN.
0.205 (5.2)
0.160(4.1)
SB120 THRU SB1200
SCHOTTKY BARRIER RECTIFIER
Reverse Voltage - 20 to 200 Volts Forward Current - 1.0 Ampere
FEATURES
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
Metal silicon junction,majority carrier conduction
Low power loss,high efficiency
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds,0.375(9.5mm) lead length,
5 lbs. (2.3kg) tension
0.034 (0.86)
0.028 (0.70)
DIA.
1.0 (25.4)
MIN.
Dimensions in inches and (millimeters)
MECHANICAL DATA
Case: JEDEC DO-41 molded plastic body
Terminals: Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight:0.012 ounce, 0.33 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
MDD Catalog Number
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375(9.5mm) lead length(see fig.1)
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 1.0A
Maximum DC reverse current TA=25 C
at rated DC blocking voltage TA=100 C
Typical junction capacitance (NOTE 1)
Typical thermal resistance (NOTE 2)
Operating junction temperature range
Storage temperature range
SYMBOLS
SB SB
120 130
SB
140
SB SB
150 160
SB
170
SB SB SB SB SB
180 190 1B0 1150 1200
UNITS
VRRM 20 30 40 50 60 70 80 90 100 150 200 VOLTS
VRMS 14 21 28 35 42 49 56 63 70 105 140 VOLTS
VDC 20 30 40 50 60 70 80 90 100 150 200 VOLTS
I(AV) 1.0 Amp
IFSM
VF
IR
CJ
RθJA
TJ,
TSTG
40.0 Amps
0.55 0.70
0.85
0.5
10.0
5.0
110 80
-65 to +125
50.0
-65 to +150
-65 to +150
0.95
0.2
2.0
Volts
mA
pF
C/W
C
C
Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2.Thermal resistance from junction to ambient at 0.375(9.5mm)lead length,P.C.B. mounted
MDD ELECTRONIC



SB1150
RATINGS AND CHARACTERISTIC CURVES SB120 THRU SB1200
FIG. 1- FORWARD CURRENT DERATING CURVE
1
0.8
0.6
Single Phase
Half Wave 60Hz
Resistive or
inductive Load
0.4
0.2 SB120-SB160
SB170-SB1200
0
0 25 50 75 100 125 150 175
AMBIENT TEMPERATURE, C
FIG. 3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
20
10
1
0.1
0.01
0.2
0.4
TJ=25 C
PULSE WIDTH=300 µs
1%DUTY CYCLE
SB120-SB140
SB150-SB160
SB170-SB1150
SB1200
0.6 0.8
1.0 1.1
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
FIG. 5-TYPICAL JUNCTION CAPACITANCE
2000
1000
SB120-SB140
SB150-SB1200
100
TJ=25 C
10
0.1
1.0 10
REVERSE VOLTAGE,VOLTS
100
FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
40
32
24
16
8 8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
0
1 10
NUMBER OF CYCLES AT 60 Hz
100
FIG. 4-TYPICAL REVERSE CHARACTERISTICS
100
10
TJ=100 C
1
TJ=75 C
0.1
0.01 TJ=25 C
0.001 0
20 40
60 80 100
PERCENT OF PEAK REVERSE VOLTAGE,%
FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE
100
10
1
0.1
0.01
0.1 1
10
t,PULSE DURATION,sec.
100
MDD ELECTRONIC





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