Features
xxxx
Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switchi...
Features
xxxx
Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94V-0
Mechanical Data
Case:JEDEC DO--41,molded plastic Polarity: Color band denotes cathode Weight: 0.012 ounces,0.34 grams
Mounting position: Any
SB120-SB1A0
Schottky Barrier Rectifiers VOLTAGE RANGE: 20 --- 100 V
CURRENT: 1.0 A DO - 41
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
9.5mm lead length,
(see fig.1)
Peak forward surge current
8.3ms single half-sine-wave
superimposed on rated load @TJ=125
Maximum instantaneous forward voltage @ 1.0A
VRRM VRMS VDC
IF(AV)
SB 120
SB 130
SB 140
SB 150
SB 160
SB 170
SB 180
SB 190
SB 1A0
UNITS
20 30 40 50 60 70 80 90 100 V
14 21 28 35 42 49 56 63 70 V
20 30 40 50 60 70 80 90 100 V
1.0 A
IFSM
40.0
A
VF 0.5
0.7
0.85 V
Maximum reverse current
@TA=25
at rated DC blocking voltage @TA=100
IR
Typical junction capacitance (Note1)
CJ
Typical thermal resistance (Note2)
RθJA
Operating junction temperature r...
