MBR1630

MBR1630 thru MBR1645 Wide Temperature Range and High Tjm Schottky Barrier Rectifiers C(TAB) A A C C A=Anode, C=Cathode, TAB=Cathode VRRM VRMS VDC V VV MBR1630 30 21 30 MBR1635 35 24.5 35 MBR1640 40 28 40 MBR1645 45 31.5 45 Dimensions TO-220AC Dim. A B C D E F G H J K L M N Q Inches Min. Max. 0.500 0.580 0.560 0.650 0.380 0.420 0.139 0.161 2.300 0.420 0.100 0.135 0.045 0.070 - 0.250 0.025 0.035 0.190 0.210 0.140 0.190 0.015 0.022 0.080 0.115 0.025 0.055 Milimeter Min. Max. 12.70 14.73 14.23 16.51 9.66 10.66 3.54 4.08 5.85 6.85 2.54 3.42 1.15 1.77 - 6.35 0.64 0.89 4.83 5.33 3.56 4.82 0.38 0.56 2.04 2.49 0.64 1.39 Symbol Characteristics I(AV) Maximum Average Forward Rectified Current @TC=125oC IFSM Peak Forward Surge Current 8.3ms Single Half-Sine-Wave Superimposed On Rated Load (JEDEC METHOD) dv/dt Voltage Rate Of Change (Rated VR) VF Maximum Forward Voltage (Note 1) IF=16A @TJ=25oC IF=16A @TJ=125oC IR Maximum DC Reverse Current At Rated DC Blocking Voltage @TJ=25oC @TJ=125oC ROJC CJ TJ TSTG Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 3) Operating Temperature Range Storage Temperature Range NOTES: 1. 300us Pulse Width, 2% Duty Cycle. 2. Thermal Resistance Junction To Case. 3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC. Maximum Ratings 16 150 10000 0.63 0.57 0.2 40 1.5 450 -55 to +150 -55 to +175 Unit A A V/us V mA oC/W pF oC oC FEATURES * Metal of silicon rectifier, majority carrier conducton * Guar...