Schottky Rectifier. MBR30H100CT Datasheet

MBR30H100CT Rectifier. Datasheet pdf. Equivalent

Part MBR30H100CT
Description Power Schottky Rectifier
Feature ELECTRONIC MBR30H100CT Power Schottky Rectifier - 30Amp 100Volt □ Features -Plastic package has U.
Manufacture Sirectifier
Datasheet
Download MBR30H100CT Datasheet

MBR30H100CT, MBRF30H100CT, MBRB30H100CT www.vishay.com Vis MBR30H100CT Datasheet
www.DataSheet4U.com MBR30H100CT SWITCHMODE™ Power Rectifier MBR30H100CT Datasheet
MBR30H100CT Taiwan Semiconductor CREAT BY ART Dual Common Ca MBR30H100CT Datasheet
ELECTRONIC MBR30H100CT Power Schottky Rectifier - 30Amp 10 MBR30H100CT Datasheet
Schottky Barrier Rectifier INCHANGE Semiconductor MBR30H100 MBR30H100CT Datasheet
Recommendation Recommendation Datasheet MBR30H100CT Datasheet





MBR30H100CT
ELECTRONIC
MBR30H100CT
Power Schottky Rectifier - 30Amp 100Volt
Features
-Plastic package has Underwriters Laboratory Flammability Classifications 94V-0
-High Junction Temperature Capability
-Low forward voltage, high current capability
-High surge capacity
-Low power loss, high efficiency
-ESD performance human body mode > 8 KV
Application
-AC/DC Switching Adaptor and TFT-LCD Power Supply
-SMPS
Absolute maximum ratings
Symbol
IF(AV)
VRRM
IFSM
VF(max)
Tj
Tstg
Ratings
30
100
350
0.67
-50 to +175
-50 to +150
Unit Conditions
A Average Forward Current
Repetitive Peak Reverse
V
Voltage
A Peak Forward Surge Current
V Forward Voltage Drop
ºC Operating Temperature
ºC Storage Temperature
TO-220AB
B
C
K
L
M
D
A
E
F
OG
IJ
HH
A1
A2
N
K
Electrical characteristics
Parameters
Symbol Ratings
Maximum Instantaneous
Forward Voltage
VF
0.83V
0.67V
Maximum Reverse Leakage
Current
IR
0.01mA
10mA
Maximum Voltage Rate of
Change
dv/dt 10,000 V/μs
Typical Thermal Resistance,
Junction to Case
Rθ (j-c)
2.2 ºC/W
Note: Pulse Test : 380μs pulse width, 2% duty cycle
Conditions
Tc = 25ºC
Tc = 125ºC
Tc = 25ºC
Tc = 125ºC
Rated VR
Per diode
DIMENSIONS
INCHES
DIM MIN MAX
MM
MIN MAX
NOTE
A .579 .606 14.70 15.40
B .392 .411 9.95 10.45
C .104 .116 2.65 2.95
D .248 .272 6.30 6.90
E .325 .350 8.25 8.90
F .126 .157 3.20 4.00
G .492 .551 12.50 14.00
H .096 .108 2.45 2.75
I .028 .039 0.70 1.00
J .010 .022 0.25 0.55
K .146 .157 3.70 4.00
L .167 .187 4.25 4.75
M .045 .057 1.15 1.45
N .089 .114 2.25 2.90
O .047 .055 1.20 1.40
September 2008 / Rev.6.2
http:// www.sirectsemi.com
1



MBR30H100CT
MBR30H100CT
1000
TJ=75ºC
TJ=125ºC
100
TJ=25ºC
10
100
TJ=175
10
TJ=150
1 TJ=125
0.1
0.01
0.001
TJ=100
TJ=75
TJ=50
TJ=25
0.0001
0
20 40 60 80 100
REVERSE VOLTAGE, VR(V)
Figure 2. Typical Values Of Reverse Current
Vs. Reverse Voltage (PerLeg)
1000
1
0 0.5 1 1.5 2
FORWARD VOLTAGE DROP, VFM(V)
Figure 1. Max. Forward Voltage Drop
Characteristics (PerLeg)
2.5
TJ=25
100
0
20 40 60 80 100
REVERSE VOLTAGE, VR(V)
Figure 3. Typical Junction Capacitance Vs.
Reverse Voltage (PerLeg)
10
D = 0.75
D = 0.50
D = 0.33
1 D = 0.25
D = 0.20
0.1
0.01
SINGLE PULSE
(THERMAL RESISTANCE)
PDM
t1
t2
Notes:
1.Duty factor D = t1 / t2
2.Peak Tj = PDM x ZthJC + TC
0.001
0.0000
1
0.0001
0.001
0.01
0.1
1
t1, RECTANGULAR PULSE DURATION (SECONDS)
10
Figure 4. Max. Thermal Impedance Z thJC Characteristics (PerLeg)
100
http:// www.sirectsemi.com
2





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)