Power Rectifier. MBRF30H150CTG Datasheet

MBRF30H150CTG Rectifier. Datasheet pdf. Equivalent

Part MBRF30H150CTG
Description Power Rectifier
Feature MBRF30H150CTG, MBR30H150CTG SWITCHMODE™ Power Rectifier 150 V, 30 A Features and Benefits • Low Forw.
Manufacture ON Semiconductor
Datasheet
Download MBRF30H150CTG Datasheet

MBRF30H150CTG, MBR30H150CTG SWITCHMODE™ Power Rectifier 150 MBRF30H150CTG Datasheet
Recommendation Recommendation Datasheet MBRF30H150CTG Datasheet





MBRF30H150CTG
MBRF30H150CTG,
MBR30H150CTG
SWITCHMODE
Power Rectifier
150 V, 30 A
Features and Benefits
Low Forward Voltage
Low Power Loss/High Efficiency
High Surge Capability
30 A Total (15 A Per Diode Leg)
GuardRing for Stress Protection
These are PbFree Devices
Applications
Power Supply Output Rectification
Power Management
Instrumentation
Mechanical Characteristics:
Case: Epoxy, Molded
Epoxy Meets UL 94 V0 @ 0.125 in
Weight (Approximately): 1.9 Grams (TO220 & TO220FP)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
MAXIMUM RATINGS
Please See the Table on the Following Page
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
30 AMPERES, 150 VOLTS
1
2, 4
3
MARKING
DIAGRAMS
1 23
TO220 FULLPAK]
CASE 221D
STYLE 3
AYWW
B30H150G
AKA
4
1 23
TO220AB
CASE 221A
STYLE 6
AYWW
B30H150G
AKA
A = Assembly Location
Y = Year
WW = Work Week
B30H150 = Device Code
G = PbFree Device
AKA
= Polarity Designator
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2010
March, 2010 Rev. 1
1
Publication Order Number:
MBRF30H150CT/D



MBRF30H150CTG
MBRF30H150CTG, MBR30H150CTG
MAXIMUM RATINGS (Per Diode Leg)
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR) TC = 124°C
(Per Leg)
(Per Device)
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
Operating Junction Temperature (Note 1)
Storage Temperature
Voltage Rate of Change (Rated VR)
ESD Ratings:
Machine Model = C
Human Body Model = 3B
Symbol
VRRM
VRWM
VR
IF(AV)
IFSM
TJ
Tstg
dv/dt
Value
150
15
30
200
20 to +150
65 to +150
10,000
> 400
> 8000
Unit
V
A
A
°C
°C
V/ms
V
THERMAL CHARACTERISTICS
Maximum Thermal Resistance
(MBR30H150CTG)
(MBRF30H150CTG)
Rating
JunctiontoCase
JunctiontoAmbient
JunctiontoCase
Symbol
RRqqJJCA
RqJC
Value
2.0
45
2.5
Unit
°C/W
ELECTRICAL CHARACTERISTICS (Per Diode Leg)
Rating
Symbol
Typ
Max Unit
Maximum Instantaneous Forward Voltage (Note 2)
(IF = 5 A, TC = 25°C)
(IF = 5 A, TC = 125°C)
(IF = 15 A, TC = 25°C)
(IF = 15 A, TC = 125°C)
vF
V
0.69 0.75
0.55 0.60
0.98 1.11
0.68 0.73
Maximum Instantaneous Reverse Current (Note 2)
(Rated DC Voltage, TC = 25°C)
(Rated DC Voltage, TC = 125°C)
iR
60 mA
50 mA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dPD/dTJ < 1/RqJA.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
DEVICE ORDERING INFORMATION
Device Order Number
Package Type
Shipping
MBRF30H150CTG
TO220FP
(PbFree)
50 Units / Rail
MBR30H150CTG
TO220
(PbFree)
50 Units / Rail
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification Brochure, BRD8011/D.
http://onsemi.com
2





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