DatasheetsPDF.com

MM10FU120K

Thinki Semiconductor

SwitchMode Single Fast Recovery Epitaxial Diode

MM10FU120K ® MM10FU120K Pb Pb Free Plating Product 10 Ampere,1200 Volt SwitchMode Single Fast Recovery Epitaxial Di...



MM10FU120K

Thinki Semiconductor


Octopart Stock #: O-1000860

Findchips Stock #: 1000860-F

Web ViewView MM10FU120K Datasheet

File DownloadDownload MM10FU120K PDF File







Description
MM10FU120K ® MM10FU120K Pb Pb Free Plating Product 10 Ampere,1200 Volt SwitchMode Single Fast Recovery Epitaxial Diode APPLICATION · Freewheeling, Snubber, Clamp · Inversion Welder · PFC · Plating Power Supply · Ultrasonic Cleaner and Welder · Converter & Chopper · UPS TO-220AC/TO-220C-2P Cathode(Bottom Side Metal Heatsink) PRODUCT FEATURE · Ultrafast Recovery Time · Soft Recovery Characteristics · Low Recovery Loss · Low Forward Voltage · High Surge Current Capability · Low Leakage Current Internal Configuration Base Backside Anode Cathode GENERAL DESCRIPTION MM10FU120K using the lastest FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic. ABSOLUTE MAXIMUM RATINGS TC=25°C unless otherwise specified Symbol Parameter Test Conditions Values Unit VR V RRM I F(AV) I F(RMS) I FSM PD TJ T STG Torque Maximum D.C. Reverse Voltage Maximum Repetitive Reverse Voltage Average Forward Current RMS Forward Current Non-Repetitive Surge Forward Current Power Dissipation Junction Temperature Storage Temperature Range Module-to-Sink TC=110°C TC=110°C TJ=45°C, t=10ms, 50Hz, Sine Recommended(M3) 1200 1200 10 15 100 70 -40 to +150 -40 to +150 1.1 V V A A A W °C °C N·m R θJC Thermal Resistance Junction-to-Case 1.8 °C /W Weight ELECTRICAL CHARACTERISTICS 2.2 g TC=25°C unless otherwise specified Symbol Parameter Test Conditions Min. Typ. Max. Unit IRM Reverse Leakage Current VR=1200V VR=1200V, TJ=125°C -- -- 100 µA -- -- 500 µ...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)