Document
2SK2836
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2836
Chopper Regulator, DC−DC Converter and Motor Drive Applications
Unit: mm
l Low drain−source ON resistance : RDS (ON) = 6.4 Ω (typ.) l High forward transfer admittance : |Yfs| = 0.85 S (typ.) l Low leakage current : IDSS = 100 µA (max) (VDSS = 600 V) l Enhancement−mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation
(Note 2)
Single pulse avalanche energy (Note 3)
Avalanche current
Repetitive avalanche energy (Note 4)
Channel temperature
Storage temperature range
Symbol
VDSS VDGR VGSS
ID IDP PD
EAS
IAR EAR Tch Tstg
Rating
600 600 ±30
1 2 2.5
56
1 0.25 150 −55~150
Unit
V V V A A W
mJ
A mJ °C °C
JEDEC
—
JEITA
—
TOSHIBA
2-7H1B
Weight: 0.12 g (typ.)
Marking
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to ambient
Rth (ch−a)
50 °C / W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: Mounted on ceramic substrate (25.4 mm × 25.4 mm × 0.8 mm)
Note 3: VDD = 90 V, Tch = 25°C (initial), L = 100 mH, RG = 25 Ω, IAR = 1 A Note 4: Repetitive rating; Pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device. Please handle with caution.
1 2002-09-04
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Gate leakage current Gate−source breakdown voltage Drain cut−off current Drain−source breakdown voltage Gate threshold voltage Drain−source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance
IGSS V (BR) GSS
IDSS V (BR) DSS
Vth RDS (ON)
|Yfs| Ciss Crss Coss
VGS = ±25 V, VDS = 0 V IG = ±10µA, VDS = 0 V VDS = 600 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 0.5 A VDS = 10 V, ID = 0.5 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
Rise time
tr
2SK2836
Min Typ. Max Unit
— — ±10
±30 —
—
— — 100
600 —
—
2.0 — 4.0
— 6.4 9.0
0.4 0.85 —
— 190 —
— 15 —
— 55 —
µA V µA V V Ω S
pF
— 12
—
Switching time
Turn−on time Fall time
ton tf
— 55 — 40
— ns
—
Turn−off time
Total gate charge (gate−source plus gate−drain) Gate−source charge Gate−drain (“miller”) Charge
toff
Qg Qgs VDD ≈ 400 V, VGS = 10 V, ID = 1 A Qgd
— 90
—9 — 3.5 — 5.5
—
— — nC —
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current (Note 1)
Pulse drain reverse current (Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP VDSF
trr Qrr
Test Condition
Min
— —
— IDR = 1 A, VGS = 0 V IDR = 1 A, VGS = 0 V, dIDR / dt = 100 A / µs
—
— — —
Typ. Max Unit
—1 A
—2
— −1.7 400 — 1.4 —
A
V ns µC
2 2002-09-04
2SK2836
3 2002-09-04
2SK2836
4 2002-09-04
2SK2836
RG = 25 W VD.