2SK2836. K2836 Datasheet

K2836 2SK2836. Datasheet pdf. Equivalent

Part K2836
Description 2SK2836
Feature 2SK2836 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2836 Chopper Regulat.
Manufacture Toshiba
Datasheet
Download K2836 Datasheet

2SK2836 TOSHIBA Field Effect Transistor Silicon N Channel MO K2836 Datasheet
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K2836
2SK2836
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2836
Chopper Regulator, DCDC Converter and Motor Drive
Applications
Unit: mm
l Low drainsource ON resistance : RDS (ON) = 6.4 (typ.)
l High forward transfer admittance : |Yfs| = 0.85 S (typ.)
l Low leakage current : IDSS = 100 µA (max) (VDSS = 600 V)
l Enhancementmode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drainsource voltage
Draingate voltage (RGS = 20 k)
Gatesource voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation
(Note 2)
Single pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy (Note 4)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
600
600
±30
1
2
2.5
56
1
0.25
150
55~150
Unit
V
V
V
A
A
W
mJ
A
mJ
°C
°C
JEDEC
JEITA
TOSHIBA
2-7H1B
Weight: 0.12 g (typ.)
Marking
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to ambient
Rth (cha)
50 °C / W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: Mounted on ceramic substrate (25.4 mm × 25.4 mm × 0.8 mm)
Note 3: VDD = 90 V, Tch = 25°C (initial), L = 100 mH, RG = 25 , IAR = 1 A
Note 4: Repetitive rating; Pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device.
Please handle with caution.
1 2002-09-04



K2836
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Gate leakage current
Gatesource breakdown voltage
Drain cutoff current
Drainsource breakdown voltage
Gate threshold voltage
Drainsource ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
IGSS
V (BR) GSS
IDSS
V (BR) DSS
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VGS = ±25 V, VDS = 0 V
IG = ±10µA, VDS = 0 V
VDS = 600 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 0.5 A
VDS = 10 V, ID = 0.5 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
Rise time
tr
2SK2836
Min Typ. Max Unit
— — ±10
±30 —
— — 100
600 —
2.0 — 4.0
— 6.4 9.0
0.4 0.85 —
— 190 —
— 15 —
— 55 —
µA
V
µA
V
V
S
pF
 12

Switching time
Turnon time
Fall time
ton
tf
 55
 40

ns

Turnoff time
Total gate charge (gatesource
plus gatedrain)
Gatesource charge
Gatedrain (“miller”) Charge
toff
Qg
Qgs VDD 400 V, VGS = 10 V, ID = 1 A
Qgd
 90
—9
— 3.5
— 5.5


 nC

SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
Min


IDR = 1 A, VGS = 0 V
IDR = 1 A, VGS = 0 V, dIDR / dt = 100 A / µs
Typ. Max Unit
—1 A
—2
1.7
400 —
1.4 —
A
V
ns
µC
2 2002-09-04





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