Document
SEMICONDUCTOR
13N60 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET 13A, 600Volts
DESCRIPTION
The Nell 13N60 is a three-terminal silicon device with current conduction capability of 13A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. threshold voltage of 4 volts.
They are designed for use in applications such as switched mode power supplies. DC to DC converters, PWM motor controls, bridge circuits and general purpose switching applications.
FEATURES
RDS(ON) = 0.26Ω @ VGS = 10V
Ultra low gate charge(40nC max.)
Low reverse transfer capacitance (CRSS = 3pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability 150°C operation temperature
D
GDS
TO-220AB (13N60A)
GDS
TO-220F (13N60AF)
D (Drain)
PRODUCT SUMMARY
ID (A) VDSS (V) RDS(ON) (Ω) QG(nC) max.
13 600 0.26 @ VGS = 10V 40
G (Gate)
S (Source)
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
VDSS
Drain to Source voltage
TJ=25°C to 150°C
VDGR
Drain to Gate voltage
RGS=20KΩ
VGS Gate to Source voltage
ID Continuous Drain Current
TC=25°C TC=100°C
IDM Pulsed Drain current(Note 1)
IAR Avalanche current(Note 1)
EAR Repetitive avalanche energy(Note 1)
lAR=4.3A,RGS=50Ω, VGS=10V
EAS dv/dt PD
Single pulse avalanche energy (Note 2) MOSFET dv/dt ruggedness Peak diode recovery dv/dt (Note 3)
Total power dissipation (Derate above 25°C)
lAS=4.3A
TC=25°C
TO-220AB TO-220F
TJ Operation junction temperature
TSTG
Storage temperature
TL Maximum soldering temperature, for 10 seconds 1.6mm from case
Mounting torque, #6-32 or M3 screw
VALUE 600 600 ±30 13 8.2 39 4.3 1.2 235 100 20
116(0.93) 34(0.27) -55 to 150 -55 to 150
300 10 (1.1)
Note: 1.Repetitive rating: pulse width limited by junction temperature.. 2.IAS=4.3A, VDD=50V, RGS=25Ω, starting TJ = 25 °C. 3.ISD ≤ 13A, di/dt ≤ 200A/µs, VDD ≤ V(BR)DSS, starting TJ = 25°C.
www.nellsemi.com
Page 1 of 8
UNIT V
A
mJ V /ns W(W/°C)
ºC lbf.in (N.m)
SEMICONDUCTOR
13N60 Series RRooHHSS
Nell High Power Products
THERMAL RESISTANCE
SYMBOL
PARAMETER
Rth(j-c)
Thermal resistance, junction to case
Rth(j-a)
Thermal resistance, junction to ambient
TO-220AB TO-220F TO-220AB TO-220F
Min. Typ. Max.
1.07 3.7 62.5 62.5
UNIT ºC/W ºC/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
OFF CHARACTERISTICS
V(BR)DSS
Drain to source breakdown voltage
ID = 1mA, VGS = 0V
▲ ▲V(BR)DSS/ TJ Breakdown voltage temperature coefficient ID = 1mA, VDS =VGS
IDSS
Drain to source leakage current
VDS=600V, VGS=0V VDS=480V, VGS=0V
TC = 25°C TC=125°C
IGSS
Gate to source forward leakage current Gate to source reverse leakage current
VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V
ON CHARACTERISTICS
RDS(ON)
Static drain to source on-state resistance
VGS(TH)
Gate threshold voltage
gfs Forward transconductance
DYNAMIC CHARACTERISTICS
VGS = 10V, lD = 6.5A VGS=VDS, ID=.