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13N60 Dataheets PDF



Part Number 13N60
Manufacturers nELL
Logo nELL
Description N-Channel Power MOSFET
Datasheet 13N60 Datasheet13N60 Datasheet (PDF)

SEMICONDUCTOR 13N60 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET 13A, 600Volts DESCRIPTION The Nell 13N60 is a three-terminal silicon device with current conduction capability of 13A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. threshold voltage of 4 volts. They are designed for use in applications such as switched mode power supplies. DC to DC converters, PWM motor controls, bridge circuits and general purpose switching applica.

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SEMICONDUCTOR 13N60 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET 13A, 600Volts DESCRIPTION The Nell 13N60 is a three-terminal silicon device with current conduction capability of 13A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. threshold voltage of 4 volts. They are designed for use in applications such as switched mode power supplies. DC to DC converters, PWM motor controls, bridge circuits and general purpose switching applications. FEATURES RDS(ON) = 0.26Ω @ VGS = 10V Ultra low gate charge(40nC max.) Low reverse transfer capacitance (CRSS = 3pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D GDS TO-220AB (13N60A) GDS TO-220F (13N60AF) D (Drain) PRODUCT SUMMARY ID (A) VDSS (V) RDS(ON) (Ω) QG(nC) max. 13 600 0.26 @ VGS = 10V 40 G (Gate) S (Source) ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) SYMBOL PARAMETER TEST CONDITIONS VDSS Drain to Source voltage TJ=25°C to 150°C VDGR Drain to Gate voltage RGS=20KΩ VGS Gate to Source voltage ID Continuous Drain Current TC=25°C TC=100°C IDM Pulsed Drain current(Note 1) IAR Avalanche current(Note 1) EAR Repetitive avalanche energy(Note 1) lAR=4.3A,RGS=50Ω, VGS=10V EAS dv/dt PD Single pulse avalanche energy (Note 2) MOSFET dv/dt ruggedness Peak diode recovery dv/dt (Note 3) Total power dissipation (Derate above 25°C) lAS=4.3A TC=25°C TO-220AB TO-220F TJ Operation junction temperature TSTG Storage temperature TL Maximum soldering temperature, for 10 seconds 1.6mm from case Mounting torque, #6-32 or M3 screw VALUE 600 600 ±30 13 8.2 39 4.3 1.2 235 100 20 116(0.93) 34(0.27) -55 to 150 -55 to 150 300 10 (1.1) Note: 1.Repetitive rating: pulse width limited by junction temperature.. 2.IAS=4.3A, VDD=50V, RGS=25Ω, starting TJ = 25 °C. 3.ISD ≤ 13A, di/dt ≤ 200A/µs, VDD ≤ V(BR)DSS, starting TJ = 25°C. www.nellsemi.com Page 1 of 8 UNIT V A mJ V /ns W(W/°C) ºC lbf.in (N.m) SEMICONDUCTOR 13N60 Series RRooHHSS Nell High Power Products THERMAL RESISTANCE SYMBOL PARAMETER Rth(j-c) Thermal resistance, junction to case Rth(j-a) Thermal resistance, junction to ambient TO-220AB TO-220F TO-220AB TO-220F Min. Typ. Max. 1.07 3.7 62.5 62.5 UNIT ºC/W ºC/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified) SYMBOL PARAMETER TEST CONDITIONS OFF CHARACTERISTICS V(BR)DSS Drain to source breakdown voltage ID = 1mA, VGS = 0V ▲ ▲V(BR)DSS/ TJ Breakdown voltage temperature coefficient ID = 1mA, VDS =VGS IDSS Drain to source leakage current VDS=600V, VGS=0V VDS=480V, VGS=0V TC = 25°C TC=125°C IGSS Gate to source forward leakage current Gate to source reverse leakage current VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V ON CHARACTERISTICS RDS(ON) Static drain to source on-state resistance VGS(TH) Gate threshold voltage gfs Forward transconductance DYNAMIC CHARACTERISTICS VGS = 10V, lD = 6.5A VGS=VDS, ID=.


S7482 13N60 13N60A


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