Power MOSFET. 13N60 Datasheet

13N60 MOSFET. Datasheet pdf. Equivalent

Part 13N60
Description N-Channel Power MOSFET
Feature SEMICONDUCTOR 13N60 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET 13A, 600Volts .
Manufacture nELL
Datasheet
Download 13N60 Datasheet

SEMICONDUCTOR 13N60 Series RRooHHSS Nell High Power Produc 13N60 Datasheet
SEMICONDUCTOR 13N60 Series RRooHHSS Nell High Power Produc 13N60A Datasheet
SEMICONDUCTOR 13N60 Series RRooHHSS Nell High Power Produc 13N60AF Datasheet
STB13N60M2, STD13N60M2 Datasheet N-channel 600 V, 0.35 Ω typ 13N60M2 Datasheet
STF13N60M2(045Y) N-channel 600 V, 0.35 Ω typ., 11 A MDmesh 13N60M2-045Y Datasheet
SEMICONDUCTOR TECHNICAL DATA General Description This planar 13N60N Datasheet
Recommendation Recommendation Datasheet 13N60 Datasheet





13N60
SEMICONDUCTOR
13N60 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET
13A, 600Volts
DESCRIPTION
The Nell 13N60 is a three-terminal silicon
device with current conduction capability of
13A, fast switching speed, low on-state
resistance, breakdown voltage rating of 600V,
and max. threshold voltage of 4 volts.
They are designed for use in applications such
as switched mode power supplies. DC to DC
converters, PWM motor controls, bridge circuits
and general purpose switching applications.
FEATURES
RDS(ON) = 0.26Ω @ VGS = 10V
Ultra low gate charge(40nC max.)
Low reverse transfer capacitance
(CRSS = 3pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
150°C operation temperature
D
GDS
TO-220AB
(13N60A)
GDS
TO-220F
(13N60AF)
D (Drain)
PRODUCT SUMMARY
ID (A)
VDSS (V)
RDS(ON) (Ω)
QG(nC) max.
13
600
0.26 @ VGS = 10V
40
G
(Gate)
S (Source)
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
VDSS
Drain to Source voltage
TJ=25°C to 150°C
VDGR
Drain to Gate voltage
RGS=20KΩ
VGS Gate to Source voltage
ID Continuous Drain Current
TC=25°C
TC=100°C
IDM Pulsed Drain current(Note 1)
IAR Avalanche current(Note 1)
EAR Repetitive avalanche energy(Note 1)
lAR=4.3A,RGS=50Ω, VGS=10V
EAS
dv/dt
PD
Single pulse avalanche energy (Note 2)
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt (Note 3)
Total power dissipation (Derate above 25°C)
lAS=4.3A
TC=25°C
TO-220AB
TO-220F
TJ Operation junction temperature
TSTG
Storage temperature
TL Maximum soldering temperature, for 10 seconds 1.6mm from case
Mounting torque, #6-32 or M3 screw
VALUE
600
600
±30
13
8.2
39
4.3
1.2
235
100
20
116(0.93)
34(0.27)
-55 to 150
-55 to 150
300
10 (1.1)
Note: 1.Repetitive rating: pulse width limited by junction temperature..
2.IAS=4.3A, VDD=50V, RGS=25Ω, starting TJ = 25 °C.
3.ISD ≤ 13A, di/dt ≤ 200A/µs, VDD V(BR)DSS, starting TJ = 25°C.
www.nellsemi.com
Page 1 of 8
UNIT
V
A
mJ
V /ns
W(W/°C)
ºC
lbf.in (N.m)



13N60
SEMICONDUCTOR
13N60 Series RRooHHSS
Nell High Power Products
THERMAL RESISTANCE
SYMBOL
PARAMETER
Rth(j-c)
Thermal resistance, junction to case
Rth(j-a)
Thermal resistance, junction to ambient
TO-220AB
TO-220F
TO-220AB
TO-220F
Min. Typ. Max.
1.07
3.7
62.5
62.5
UNIT
ºC/W
ºC/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
OFF CHARACTERISTICS
V(BR)DSS
Drain to source breakdown voltage
ID = 1mA, VGS = 0V
▲ ▲V(BR)DSS/ TJ Breakdown voltage temperature coefficient ID = 1mA, VDS =VGS
IDSS
Drain to source leakage current
VDS=600V, VGS=0V
VDS=480V, VGS=0V
TC = 25°C
TC=125°C
IGSS
Gate to source forward leakage current
Gate to source reverse leakage current
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
ON CHARACTERISTICS
RDS(ON)
Static drain to source on-state resistance
VGS(TH)
Gate threshold voltage
gfs Forward transconductance
DYNAMIC CHARACTERISTICS
VGS = 10V, lD = 6.5A
VGS=VDS, ID=250μA
VDS=40V, ID=6.5A
CISS
COSS
CRSS
COSS
COSS eff
QG
QGS
QGD
ESR
Input capacitance
Output capacitance
Reverse transfer capacitance
Output capacitance
Effective output capacitance
Total gate charge
Gate to source charge
Gate to drain charge (Miller charge)
Equivalent series resistance (G-S)
VDS = 100V, VGS = 0V, f =1MHz
VDS = 380V, VGS = 0V, f =1MHz
VDS = 0 to 480V, VGS = 0V
VDD = 380V, VGS = 10V
ID = 6.5A, (Note1,2)
Drain open
SWITCHING CHARACTERISTICS
td(ON)
tr
td(OFF)
Turn-on delay time
Rise time
Turn-off delay time
VDD = 380V, VGS = 10V
ID = 6.5A, RG=4.7(Note1,2)
tf Fall time
Min.
600
2
Typ. Max. UNIT
0.73
V
V/ºC
10
μA
100
100
-100
nA
0.24
16.3
0.26
4
Ω
V
S
1325
50
1765
65
3 5 pF
30
145
30.5 40
6.0 nC
9.5
2.8
14.5 39
10.5 31.5
45 100
10 30
ns
www.nellsemi.com
Page 2 of 8





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)