DATA SHEET
SILICON TRANSISTOR
2SC5012
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER...
DATA SHEET
SILICON
TRANSISTOR
2SC5012
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL
TRANSISTOR 4 PINS SUPER MINI MOLD
FEATURES Small Package High Gain Bandwidth Product (fT = 9 GHz TYP.) Low Noise, High Gain Low Voltage Operation
ORDERING INFORMATION
PART NUMBER 2SC5012-T1
2SC5012-T2
QUANTITY 3 Kpcs/Reel.
3 Kpcs/Reel.
PACKING STYLE
Embossed tape 8 mm wide. Pin 3 (Base), Pin 4 (Emitter) face to perforation side of the tape.
Embossed tape 8 mm wide. Pin1 (Collector), Pin2 (Emitter) face to perforation side of the tape.
* Please contact with responsible NEC person, if you require evaluation sample. Unit sample quantity shall be 50 pcs. (Part No.: 2SC5012)
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Collector to Base Voltage
VCBO
20
Collector to Emitter Voltage
VCEO
10
Emitter to Base Voltage
VEBO
1.5
Collector Current
IC 65
Total Power Dissipation
PT 150
Junction Temperature
Tj 150
Storage Temperature
Tstg –65 to +150
V V V mA mW ˚C ˚C
0.9 ± 0.1 0.3
2.0 ± 0.2 (1.25)
0.60 0.65
PACKAGE DIMENSIONS in millimeters
+0.1 –0.05
2.1 ± 0.2 1.25 ± 0.1
0.3
+0.1 –0.05
(LEADS 2, 3, 4)
0.3
23
(1.3)
XYZ
+0.1 –0.05
0.4
+0.1 –0.05
1
4
0.3
0 to 0.1
0.15
+0.1 –0.05
PIN CONNECTIONS
1. Collector 2. Emitter 3. Base 4. Emitter
Caution; Electrostatic Sensitive Device.
Document No. P10400EJ2V0DS00 (2nd edition) (Previous No. TD-2412) Date Published July 1995 P Printed in Japan
© 1993
2SC5012
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTE...
