DUAL RECTIFIERS. SF20A600HZ2 Datasheet

SF20A600HZ2 RECTIFIERS. Datasheet pdf. Equivalent

Part SF20A600HZ2
Description ULTRAFAST DUAL RECTIFIERS
Feature 600V, 20A ULTRAFAST DUAL RECTIFIERS SF20A600HZ2 Ultrafast Recovery Rectifier Features  Low forwar.
Manufacture KODENSHI
Datasheet
Download SF20A600HZ2 Datasheet

600V, 20A ULTRAFAST DUAL RECTIFIERS SF20A600HZ2 Ultrafast R SF20A600HZ2 Datasheet
Recommendation Recommendation Datasheet SF20A600HZ2 Datasheet





SF20A600HZ2
600V, 20A ULTRAFAST DUAL RECTIFIERS
SF20A600HZ2
Ultrafast Recovery Rectifier
Features
Low forward voltage drop and leakage current
Ultrafast reverse recovery time (trr<35ns)
Low power loss and high efficiency
Dual common cathode rectifier construction
Full lead (Pb)-free and RoHS compliant device
13
2
1 23
Pin 1, 3 : Anode
Pin 2 : Cathode
Applications
Switching power supply
Power inverters
Free-wheeling diode
Power conversion system
TO-220F-3L
(Z2 Forming)
Product Characteristics
IF(AV)
VRRM
2 x 10A
600V
Motor drives
VFM @ Tj=125
1.68V (Max.)
trr 35ns
Description
The SF20A600HPI is an ultrafast rectifier. It has a low forward voltage drop and reverse recovery time
(trr<35ns). The device is intended for use as a free wheeling, clamping rectifier in a variety of switching
power supplies and other power switching applications.
Ordering Information
Device
SF20A600HZ2
Marking Code
SF20A600H
Marking Information
Package
TO-220F-3L
(Z2 Forming)
Packaging
Tube
AUK = Manufacture Logo
Δ = Control Code of Manufacture
YMDD = Date Code Marking
-. Y = Year Code
-. M = Monthly Code
-. DD = Daily Code
SF20A600H = Specific Device Code
KSD-D0O038-000
1



SF20A600HZ2
Absolute Maximum Ratings (Limiting Values)
Characteristic
Maximum repetitive reverse voltage
Maximum working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current
per diode
total device
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load per 1 chip
Storage temperature range
Maximum operating junction temperature
SF20A600HZ2
Symbol
VRRM
VRWM
VR
IF(AV)
IFSM
Tstg
Tj
Value
600
10
20
100
-45 to +150
150
Unit
V
A
A
Thermal Characteristics
Characteristic
Maximum thermal resistance junction to case
per diode
total device
Symbol
Rth(j-c)
Value
4.0
3.6
Unit
/W
Electrical Characteristics (Per Diode)
Characteristic
Symbol
Peak forward voltage drop
VFM (1)
Reverse leakage current
IRM (1)
Reverse recovery time
trr
Junction capacitance
Cj
Note : (1) Pulse test : tP380us, Duty cycle2%
Test Condition
IFM = 10A
VR = VRRM
Tj=25
Tj=125
Tj=25
Tj=125
IF = 1A, di/dt =-100 A/us
VR = 4VDC, f=1MHz
Min.
-
-
-
-
-
Typ.
-
-
-
-
-
Max.
1.90
1.68
20
200
35
Unit
V
uA
ns
- 70 - pF
KSD-D0O038-000
2





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)