POWER MOSFET. AP10P10GJ-HF Datasheet

AP10P10GJ-HF MOSFET. Datasheet pdf. Equivalent

Part AP10P10GJ-HF
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Feature Advanced Power Electronics Corp. AP10P10GH/J-HF Halogen-Free Product P-CHANNEL ENHANCEMENT MODE POW.
Manufacture Advanced Power Electronics
Datasheet
Download AP10P10GJ-HF Datasheet

Advanced Power Electronics Corp. AP10P10GH/J-HF Halogen-Fre AP10P10GJ-HF Datasheet
Recommendation Recommendation Datasheet AP10P10GJ-HF Datasheet





AP10P10GJ-HF
Advanced Power
Electronics Corp.
AP10P10GH/J-HF
Halogen-Free Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
Lower Gate Charge
Fast Switching Characteristic
RoHS Compliant & Halogen-Free
D BVDSS
-100V
RDS(ON)
500mΩ
G ID -5.7A
S
Description
Advanced Power MOSFETs from APEC provide the designer with the best
combination of fast switching, ruggedized device design, low on-resistance
and cost-effectiveness.
G D S TO-252(H)
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications such as
DC/DC converters. The through-hole version (AP10P10GJ) is available for
low-profile applications.
G
D
S
TO-251(J)
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
PD@TA=25
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Drain Current, VGS @ 10V
Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Total Power Dissipation3
Storage Temperature Range
Operating Junction Temperature Range
-100
+30
-5.7
-3.6
-15
32.5
2
-55 to 150
-55 to 150
V
V
A
A
A
W
W
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
3.85
62.5
110
Units
/W
/W
/W
1
201501123



AP10P10GJ-HF
AP10P10GH/J-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS=0V, ID=-250uA
VGS=-10V, ID=-3A
VGS=-4.5V, ID=-2A
VDS=VGS, ID=-250uA
VDS=-10V, ID=-3A
VDS=-80V, VGS=0V
VGS=+20V, VDS=0V
ID=-3A
VDS=-80V
VGS=-4.5V
VDS=-50V
ID=-3A
RG=3.3Ω
VGS=-10V
VGS=0V
VDS=-25V
f=1.0MHz
f=1.0MHz
-100 - - V
- - 500 m
- - 600 m
-1 - -3 V
-5-S
- - -25 uA
- - +100 nA
- 6 9.6 nC
- 1.5 - nC
- 3.2 - nC
- 7 - ns
- 6 - ns
- 15 - ns
- 4 - ns
- 450 720 pF
- 40 - pF
- 30 - pF
- 5.6 11.2 Ω
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
IS=-3A, VGS=0V
IS=-3A, VGS=0V,
dI/dt=-100A/µs
Min. Typ. Max. Units
- - -1.3 V
- 35 - ns
- 58 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)