N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics Corp.
AP10TN003P
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Rg & U...
Description
Advanced Power Electronics Corp.
AP10TN003P
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Rg & UIS Test ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free
G
D S
Description
AP41600T4N0s0e3riesearirees fraorme AfrdovmancAeddvaPnocweder Pinonwoevrateindnodveastiegdn adnedsigsnilicaonnd psrioliceosnsptreocchensoslotgeychtonoalocghyievtoe tahcehileovweestht epolosswibelset opno-srseisbilsetanocne-reasnisdtafanscte swanitdchifnagstpesrwfoirtcmhainngce.peItrfporromvaidnecse.theIt dperosvigidneesr twheithdeasnigenxetrrewmiteh aenfficeixetnret mdeeveicffeiciefonrt udseevicine faorwuidse rinanagweidoef proawngeer aopf pploicwaetironasp.plications. The TO-220 package is widely preferred for all commercialindustrial through hole applications. The low thermal resistance and low package cost contribute to the worldwide popular package.
BVDSS
RDS(ON) ID4
100V 3mΩ 200A
G D S
TO-220(P)
Absolute
Symbol
Maximum
RatingPsa@ramTej=te2r 5oC. (unless
otherwise specified)
Rating
Units
VDS VGS ID@TC=25℃ ID@TC=25℃ ID@TC=100℃ IDM
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Chip), VGS @ 10V Drain Current, VGS @ 10V4 Drain Current, VGS @ 10V4 Pulsed Drain Current1
100 V +20 V 200 A 120 A 120 A 400 A
PD@TC=25℃ PD@TA=25℃ EAS TSTG TJ
Total Power Dissipation Total Power Dissipation Single Pulse Avalanche Energy3 Storage Temperature Range Operating Junction Temperature Range
227 2
612 -55 to 150 -55 to 150
W W mJ ℃ ...
Similar Datasheet