AP10TN040P

Advanced Power Electronics Corp. AP10TN040P Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Rg & UIS Test ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free G D S Description AP41600T4N0s4e0riesearirees fraorme AfrdovmancAeddvaPnocweder Pinonwoevrateindnodveastiegdn adnedsigsnilicaonnd psrioliceosnsptreocchensoslotgeychtonoalocghyievtoe tahcehileovweestht epolosswibelset opno-srseisbilsetanocne-reasnisdtafanscte swanitdchifnagstpesrwfoirtcmhainngce.peItrfporromvaidnecse.theIt dperosvigidneesr twheithdeasnigenxetrrewmiteh aenfficeixetnret mdeeveicffeiciefonrt udseevicine faorwuidse rinanagweidoef proawngeer aopf pploicwaetironasp.plications. The TO-220 package is widely preferred for all commercialindustrial through hole applications. The low thermal resistance and low package cost contribute to the worldwide popular package. BVDSS RDS(ON) ID 100V 40mΩ 31.5A G D S TO-220(P) Absolute Symbol Maximum RatingPsa@ramTej=te2r 5oC. (unless otherwise specified) Rating Units VDS Drain-Source Voltage 100 V VGS ID@TC=25℃ ID@TC=100℃ IDM Gate-Source Voltage Drain Current, VGS @ 10V Drain Current, VGS @ 10V Pulsed Drain Current1 +20 V 31.5 A 20 A 100 A PD@TC=25℃ PD@TA=25℃ EAS TSTG Total Power Dissipation Total Power Dissipation Single Pulse Avalanche Energy3 Storage Temperature Range 89.2 2 72 -55 to 150 W W mJ ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Rthj-c ...