POWER MOSFET. AP11N50I Datasheet

AP11N50I MOSFET. Datasheet pdf. Equivalent

Part AP11N50I
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Feature Advanced Power Electronics Corp. AP11N50I Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOS.
Manufacture Advanced Power Electronics
Datasheet
Download AP11N50I Datasheet

Advanced Power Electronics Corp. AP11N50I Halogen-Free Prod AP11N50I Datasheet
AP11N50I-HF Halogen-Free Product Advanced Power Electronics AP11N50I-HF Datasheet
Recommendation Recommendation Datasheet AP11N50I Datasheet





AP11N50I
Advanced Power
Electronics Corp.
AP11N50I
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Low On-resistance
Simple Drive Requirement
Fast Switching Characteristic
RoHS Compliant & Halogen-Free
G
D
S
Description
AP11N50 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-220CFM package is widely preferred for all commercial-
industrial through hole applications. The mold compound provides
a high isolation voltage capability and low thermal resistance
between the tab and the external heat-sink.
VDS @ Tj,max.
RDS(ON)
ID
550V
0.68Ω
11A
GD S
TO-220CFM(I)
Absolute Maximum Ratings@Tj=25o.C(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS Drain-Source Voltage
500 V
VGS
ID@TC=25
ID@TC=100
IDM
Gate-Source Voltage
Drain Current, VGS @ 10V4
Drain Current, VGS @ 10V4
Pulsed Drain Current1
+30 V
11 A
5.6 A
40 A
PD@TC=25
EAS
Total Power Dissipation
Single Pulse Avalanche Energy2
40 W
21.8 mJ
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
3.2
65
Units
/W
/W
1
201409184



AP11N50I
AP11N50I
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance3
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V, ID=1mA
VGS=10V, ID=4.5A
VDS=VGS, ID=250uA
VDS=10V, ID=6A
VDS=400V, VGS=0V
VGS=+30V, VDS=0V
ID=6A
VDS=400V
VGS=10V
VDD=250V
ID=6A
RG=50Ω
VGS=10V
VGS=0V
VDS=25V
.f=1.0MHz
500 - - V
- - 0.68 Ω
2 - 4V
- 20 -
S
- - 100 uA
- - +100 nA
- 43 69 nC
- 8 - nC
- 20 - nC
- 36 - ns
- 53 - ns
- 230 - ns
- 60 - ns
- 1680 2600 pF
- 160 - pF
- 15 - pF
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage3
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
IS=6A, VGS=0V
IS=6A, VGS=0V
dI/dt=100A/µs
Notes:
1.Pulse width limited by Max junction temperature.
2.Starting Tj=25oC , VDD=50V , L=1mH , RG=25
3.Pulse test
4.Ensure that the junction temperature does not exceed TJmax..
Min. Typ. Max. Units
- - 1.5 V
- 350 - ns
- 5 - uC
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)