POWER MOSFET. AP15TP1R0YT Datasheet

AP15TP1R0YT MOSFET. Datasheet pdf. Equivalent

Part AP15TP1R0YT
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Feature Advanced Power Electronics Corp. AP15TP1R0YT Halogen-Free Product P-CHANNEL ENHANCEMENT MODE POWER .
Manufacture Advanced Power Electronics
Datasheet
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Advanced Power Electronics Corp. AP15TP1R0YT Halogen-Free P AP15TP1R0YT Datasheet
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AP15TP1R0YT
Advanced Power
Electronics Corp.
AP15TP1R0YT
Halogen-Free Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
Small Size & Lower Profile
RoHS Compliant & Halogen-Free
G
D BVDSS
-150V
RDS(ON)
1Ω
ID3 -1.2A
S
Description
AP15TP1R0 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-resistance
and fast switching performance. It provides the designer with an extreme
efficient device for use in a wide range of power applications.
The PMPAK ® 3x3 package is special for voltage conversion application
using standard infrared reflow technique with the backside heat sink to
achieve the good thermal performance.
D
D
D
D
S
S
S
G
PMPAK® 3x3
Absolute Maximum Ratings@Tj=25o.C(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
VGS
ID@TA=25
ID@TA=70
IDM
Drain-Source Voltage
Gate-Source Voltage
Drain Current3, VGS @ 10V
Drain Current3, VGS @ 10V
Pulsed Drain Current1
-150
+25
-1.2
-1
-6
V
V
A
A
A
PD@TA=25
EAS
TSTG
TJ
Total Power Dissipation
Single Pulse Avalanche Energy4
Storage Temperature Range
Operating Junction Temperature Range
3.13
6
-55 to 150
-55 to 150
W
mJ
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
5
40
Unit
/W
/W
1
201504101



AP15TP1R0YT
AP15TP1R0YT
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS=0V, ID=-250uA
VGS=-10V, ID=-1.2A
VGS=-6V, ID=-0.8A
VDS=VGS, ID=-250uA
VDS=-10V, ID=-1.2A
VDS=-120V, VGS=0V
VGS=+25V, VDS=0V
ID=-1.2A
VDS=-75V
VGS=-10V
VDS=-75V
ID=-1A
RG=3.3
VGS=-10V
VGS=0V
.VDS=-50V
f=1.0MHz
f=1.0MHz
-150
-
-
-1.2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
--
0.75 1
0.78 1.2
-2 -4
3.7 -
- -25
- +100
12 19.2
2-
2.5 -
9-
5-
26 -
8-
520 832
26 -
19 -
21 42
V
Ω
Ω
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
IS=-2.9A, VGS=0V
IS=-1.2A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - -1.2 V
- 50 - ns
- 80 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 2oz copper pad of FR4 board, t <10sec ; 210oC/W when mounted on min. copper pad.
4.Starting Tj=25oC , VDD=-50V , L=3mH , RG=25Ω
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2





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