AP16N50P-HF

Advanced Power Electronics Corp. AP16N50P-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-resistance ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free G D S Description AP16N50 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-220 package is widely preferred for all commercialindustrial through hole applications. The low thermal resistance and low package cost contribute to the worldwide popular package. BVDSS RDS(ON) ID 500V 0.4Ω 16A G DS TO-220(P) Absolute Maximum Ratings@Tj=25oC. (unless otherwise specified) Symbol Parameter Rating Units VDS Drain-Source Voltage 500 V VGS Gate-Source Voltage +30 V ID@TC=25℃ ID@TC=100℃ IDM Drain Current, VGS @ 10V Drain Current, VGS @ 10V Pulsed Drain Current1 16 A 11 A 60 A PD@TC=25℃ EAS Total Power Dissipation Single Pulse Avalanche Energy3 173.6 75 W mJ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice Value 0.72 62 Units ℃/W ℃/W 1 201501133 AP16N50P-HF Electrical Characteristics@Tj=25...