POWER MOSFET. AP16N50P-HF Datasheet

AP16N50P-HF MOSFET. Datasheet pdf. Equivalent

Part AP16N50P-HF
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Feature Advanced Power Electronics Corp. AP16N50P-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER .
Manufacture Advanced Power Electronics
Datasheet
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Advanced Power Electronics Corp. AP16N50P-HF Halogen-Free P AP16N50P-HF Datasheet
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AP16N50P-HF
Advanced Power
Electronics Corp.
AP16N50P-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Low On-resistance
Simple Drive Requirement
Fast Switching Characteristic
RoHS Compliant & Halogen-Free
G
D
S
Description
AP16N50 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-220 package is widely preferred for all commercial-
industrial through hole applications. The low thermal resistance and
low package cost contribute to the worldwide popular package.
BVDSS
RDS(ON)
ID
500V
0.4Ω
16A
G
DS
TO-220(P)
Absolute Maximum Ratings@Tj=25oC. (unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS Drain-Source Voltage
500 V
VGS Gate-Source Voltage
+30 V
ID@TC=25
ID@TC=100
IDM
Drain Current, VGS @ 10V
Drain Current, VGS @ 10V
Pulsed Drain Current1
16 A
11 A
60 A
PD@TC=25
EAS
Total Power Dissipation
Single Pulse Avalanche Energy3
173.6
75
W
mJ
TSTG
Storage Temperature Range
-55 to 150
TJ
Operating Junction Temperature Range
-55 to 150
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
0.72
62
Units
/W
/W
1
201501133



AP16N50P-HF
AP16N50P-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V, ID=250uA
VGS=10V, ID=6.5A
VDS=VGS, ID=250uA
VDS=10V, ID=8A
VDS=500V, VGS=0V
VGS=+30V, VDS=0V
ID=16A
VDS=400V
VGS=10V
VDD=200V
ID=8A
RG=50Ω
VGS=10V
VGS=0V
VDS=15V
.f=1.0MHz
500 - - V
- - 0.4 Ω
2 - 4V
-8-S
- - 100 uA
- - +100 nA
- 33 53 nC
- 11 - nC
- 9 - nC
- 55 - ns
- 50 - ns
- 141 - ns
- 40 - ns
- 1950 3120 pF
- 630 - pF
- 20 - pF
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
IS=16A, VGS=0V
IS=16A, VGS=0V
dI/dt=100A/µs
Notes:
1.Pulse width limited by Max junction temperature.
2.Pulse test
3.Starting Tj=25oC , VDD=50V, VGS=10V, L=3mH, RG=25Ω
Min. Typ. Max. Units
- - 1.3 V
- 495 - ns
- 10 - uC
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2





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