POWER MOSFET. AP18N50W-HF Datasheet

AP18N50W-HF MOSFET. Datasheet pdf. Equivalent

Part AP18N50W-HF
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Feature Advanced Power Electronics Corp. AP18N50W-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER .
Manufacture Advanced Power Electronics
Datasheet
Download AP18N50W-HF Datasheet

Advanced Power Electronics Corp. AP18N50W-HF Halogen-Free P AP18N50W-HF Datasheet
Recommendation Recommendation Datasheet AP18N50W-HF Datasheet





AP18N50W-HF
Advanced Power
Electronics Corp.
AP18N50W-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Low On-resistance
Simple Drive Requirement
Fast Switching Characteristic
RoHS Compliant & Halogen-Free
G
D
S
Description
AP18N50 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-3P package is widely preferred for commercial-industrial
applications. The device is suited for switch mode power supplies,
DC-AC converters and high current high speed switching circuits.
BVDSS
RDS(ON)
ID
G
D
S
500V
0.27Ω
20A
TO-3P
Absolute Maximum Ratings@Tj=25o.C(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS Drain-Source Voltage
500 V
VGS
ID@TC=25
Gate-Source Voltage
Drain Current, VGS @ 10V
+30 V
20 A
ID@TC=100
IDM
Drain Current, VGS @ 10V
Pulsed Drain Current1
10 A
80 A
PD@TC=25
EAS
Total Power Dissipation
Single Pulse Avalanche Energy2
150 W
200 mJ
TSTG
Storage Temperature Range
-55 to 150
TJ
Operating Junction Temperature Range
-55 to 150
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
0.833
40
Units
/W
/W
1
201409013



AP18N50W-HF
AP18N50W-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance3
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V, ID=1mA
VGS=10V, ID=10A
VDS=VGS, ID=250uA
VDS=10V, ID=10A
VDS=400V, VGS=0V
VGS=+30V, VDS=0V
ID=20A
VDS=400V
VGS=10V
VDD=200V
ID=10A
RG=50Ω
VGS=10V
VGS=0V
VDS=25V
.f=1.0MHz
500 -
-
- - 0.27
2-4
- 10 -
- - 100
- - +100
- 94 150
- 23 -
- 36 -
- 113 -
- 80
-
- 525 -
- 100 -
- 4600 7400
- 350 -
- 10 -
V
Ω
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage3
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
IS=20A, VGS=0V
IS=20A, VGS=0V
dI/dt=100A/µs
Notes:
1.Pulse width limited by Max junction temperature.
2.Starting Tj=25oC , VDD=50V , L=1mH , RG=25
3.Pulse test
Min. Typ. Max. Units
- - 1.3 V
- 490 -
ns
- 10 - uC
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)