POWER MOSFET. AP18P10GK-HF Datasheet

AP18P10GK-HF MOSFET. Datasheet pdf. Equivalent

Part AP18P10GK-HF
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Feature Advanced Power Electronics Corp. AP18P10GK-HF Halogen-Free Product P-CHANNEL ENHANCEMENT MODE POWER.
Manufacture Advanced Power Electronics
Datasheet
Download AP18P10GK-HF Datasheet

Advanced Power Electronics Corp. AP18P10GK-HF Halogen-Free AP18P10GK-HF Datasheet
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AP18P10GK-HF
Advanced Power
Electronics Corp.
AP18P10GK-HF
Halogen-Free Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Lower Gate Charge
Simple Drive Requirement
Fast Switching Characteristic
RoHS Compliant & Halogen-Free
D
SOT-223
S
D
G
BVDSS
RDS(ON)
ID
Description
AP18P10 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The SOT-223 package is designed for suface mount application, larger
heatsink than SO-8 and SOT package.
G
-100V
160mΩ
-3.1A
D
S
Absolute Maximum Ratings@Tj=25oC.(unless otherwise specified)
Symbol
Parameter
Rating
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Drain Current3, VGS @ 10V
Drain Current3, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
-100
+20
-3.1
-2.5
-10
2.5
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
45
Unit
/W
1
201508052



AP18P10GK-HF
AP18P10GK-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V, ID=-250uA
VGS=-10V, ID=-2A
VGS=-4.5V, ID=-1A
VDS=VGS, ID=-250uA
VDS=-10V, ID=-2A
VDS=-80V, VGS=0V
VGS=+20V, VDS=0V
ID=-2A
VDS=-50V
VGS=-4.5V
VDS=-50V
ID=-1A
RG=3.3
VGS=-10V
VGS=0V
.VDS=-25V
f=1.0MHz
-100 - - V
- - 160 mΩ
- - 200 mΩ
-1 - -3 V
- 8.4 -
S
- - -25 uA
- - +100 nA
- 14 22.4 nC
- 4 - nC
- 7 - nC
- 10 - ns
- 5 - ns
- 55 - ns
- 22 - ns
- 1500 2400 pF
- 120 - pF
- 70 - pF
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
IS=-2A, VGS=0V
IS=-2A, VGS=0V,
dI/dt=-100A/µs
Min. Typ. Max. Units
- - -1.3 V
- 40 - ns
- 75 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 120 /W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2





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