Barrier Rectifiers. 1N5820 Datasheet

1N5820 Rectifiers. Datasheet pdf. Equivalent

Part 1N5820
Description Schottky Barrier Rectifiers
Feature CREAT BY ART 3A, 20V - 40V Schottky Barrier Rectifiers 1N5820 - 1N5822 Taiwan Semiconductor FEATUR.
Manufacture Taiwan Semiconductor
Datasheet
Download 1N5820 Datasheet

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order thi 1N5820 Datasheet
RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION 1N5820 THRU 1 1N5820 Datasheet
1N5820-1N5822 1N5820 - 1N5822 Features • 3.0 ampere operat 1N5820 Datasheet
1N5820 - 1N5822 PRV : 20 - 40 Volts IO : 3.0 Ampere FEATURES 1N5820 Datasheet
1N5820 3.0 AMP SCHOTTKY BARRIER RECTIFIERS THRU 1N5822 VO 1N5820 Datasheet
1N5820 THRU 1N5822 SCHOTTKY BARRIER RECTIFIER Reverse Voltag 1N5820 Datasheet
MCC Features • • • • Low Switching Noise Low Forward Voltage 1N5820 Datasheet
1N 5820 … 1N 5822 Schottky Barrier Rectifiers Schottky-Barri 1N5820 Datasheet
1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devic 1N5820 Datasheet
CREAT BY ART 3A, 20V - 40V Schottky Barrier Rectifiers 1N58 1N5820 Datasheet
Recommendation Recommendation Datasheet 1N5820 Datasheet





1N5820
CREAT BY ART
3A, 20V - 40V Schottky Barrier Rectifiers
1N5820 - 1N5822
Taiwan Semiconductor
FEATURES
- Low forward voltage drop
- Guardring for overvoltage protection
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
MECHANICAL DATA
Case: DO-201AD
Molding compound, UL flammability classification rating 94V-0
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Pure tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity: Indicated by cathode band
Weight: 1.10g (approximately)
DO-201AD
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
PARAMETER
SYMBOL 1N5820
1N5821
1N5822
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
VRRM
20
30
40
VRMS
14
21
28
VDC 20 30 40
IF(AV)
3
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
70
Maximum instantaneous forward voltage (Note 1)
@3A
VF 0.475 0.500 0.525
Maximum reverse current @ rated VR
TJ=25°C
TJ=100°C
Typical Junction Capacitance (Note 2)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300 μs, 1% duty cycle
Note 2: Measure at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.
IR
CJ
RθJA
TJ
TSTG
0.5
10
200
40
- 55 to +125
- 55 to +125
UNIT
V
V
V
A
A
V
mA
pF
°C/W
°C
°C
Document Number: D1307015
Version: H15



1N5820
1N5820 - 1N5822
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
PART NO.
SUFFIX
PACKING
CODE
A0
PACKING CODE
SUFFIX (*)
1N582x
(Note 1)
H
R0
B0
G
X0
Note 1: "x" defines voltage from 20V (1N5820) to 40V (1N5822)
*: Optional available
PACKAGE
DO-201AD
DO-201AD
DO-201AD
DO-201AD
PACKING
500 / Ammo box
1,250 / 13" Paper reel
500 / Bulk packing
Forming
EXAMPLE
PREFERRED P/N
1N5820HA0G
PART NO.
1N5820
PART NO.
SUFFIX
H
PACKING CODE
A0
PACKING CODE
SUFFIX
G
DESCRIPTION
AEC-Q101 qualified
Green compound
RATINGS AND CHARACTERISTICS CURVES
(TA=25°C unless otherwise noted)
FIG.1 MAXIMUM FORWARD CURRENT
DERATING CURVE
4
3
2
1
RESISTIVE OF
INDUCTIVE LOAD
0
0 20 40 60 80 100 120 140
LEAD TEMPERATURE (oC)
80
70
60
50
40
30
20
10
1
FIG. 2 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
8.3ms Single Half Sine Wave
10
NUMBER OF CYCLES AT 60 Hz
100
FIG. 3- TYPICAL FORWARD CHARACTERISTICS
100
1N5820
10
1N5821-1N5822
1
Pulse Width=300μs
1% Duty Cycle
0.1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
FORWARD VOLTAGE (V)
FIG. 4 TYPICAL REVERSE CHARACTERISTICS
10
TJ=100°C
1
0.1
0.01
TJ=75°C
TJ=25°C
0.001
0
20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Document Number: D1307015
Version: H15





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