SCHOTTKY RECTIFIERS. CTLSH8-60M364 Datasheet

CTLSH8-60M364 RECTIFIERS. Datasheet pdf. Equivalent

Part CTLSH8-60M364
Description SILICON SCHOTTKY RECTIFIERS
Feature CTLSH8-60M364 SURFACE MOUNT LOW VF SILICON SCHOTTKY RECTIFIER w w w. c e n t r a l s e m i . c o m .
Manufacture Central Semiconductor
Datasheet
Download CTLSH8-60M364 Datasheet

CTLSH8-60M364 SURFACE MOUNT LOW VF SILICON SCHOTTKY RECTIFIE CTLSH8-60M364 Datasheet
Recommendation Recommendation Datasheet CTLSH8-60M364 Datasheet





CTLSH8-60M364
CTLSH8-60M364
SURFACE MOUNT
LOW VF
SILICON SCHOTTKY RECTIFIER
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CTLSH8-60M364
is a high performance 8.0 amp silicon Schottky rectifier
designed for applications as a by-pass diode in low
profile solar panels.
MARKING CODE: CTLSH86
TLM364 CASE
Device is Halogen Free by design
APPLICATIONS:
• Solar by-pass diode
• OR-ing diode
• DC-DC output rectification
• Reverse polarity protection
• Power management
FEATURES:
Low forward voltage, VF=0.54V MAX @ 8.0A
Low reverse leakage current, IR=0.6mA MAX @ 60V
Low profile 1.2mm MAX package height
MAXIMUM RATINGS: (TA=25°C)
Peak Repetitive Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Forward Current (TL=125°C)
Peak Forward Surge Current, tp=8.3ms
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
SYMBOL
VRRM
VR
VR(RMS)
IO
IFSM
TJ, Tstg
ΘJA
ΘJL
60
60
42
8.0
280
-55 to +150
60
7.0
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN TYP
IR VR=60V
0.1
IR VR=60V, TA=125°C
18
BVR
IR=1.0mA
60
VF IF=1.0A
0.30
VF IF=1.0A, TA=125°C
0.20
VF IF=8.0A
0.47
VF IF=8.0A, TA=125°C
0.46
MAX
0.6
0.35
0.54
UNITS
V
V
V
A
A
°C
°C/W
°C/W
UNITS
mA
mA
V
V
V
V
V
R2 (26-April 2012)



CTLSH8-60M364
CTLSH8-60M364
SURFACE MOUNT
LOW VF
SILICON SCHOTTKY RECTIFIER
TLM364 CASE - MECHANICAL OUTLINE
SUGGESTED MOUNTING PADS
(Dimensions in mm)
LEAD CODE:
1) Anode
2) Anode
3) Cathode
MARKING CODE: CTLSH86
w w w. c e n t r a l s e m i . c o m
R2 (26-April 2012)





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