PMZ130UNE

SOT883 PMZ130UNE 20 V, N-channel Trench MOSFET 12 March 2015 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Very fast switching Low threshold voltage Trench MOSFET technology ElectroStatic Discharge (ESD) protection: 2 kV HBM Leadless ultra small package: 1.0 × 0.6 × 0.48 mm 3. Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = 4.5 V; Tamb = 25 °C VGS = 4.5 V; ID = 1.8 A; Tj = 25 °C Min Typ Max Unit - - 20 V -8 - 8V [1] - - 1.8 A - 120 150 mΩ [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2. Scan or click this QR code to view the latest information for this product NXP Semiconductors PMZ130UNE 20 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline 1 3 2 Transparent top view DFN1006-3 (SOT883) Graphic symbol D G S 017aaa255 6. Ordering information Table 3. Ordering information Type number Package Name PMZ130UNE DFN1006-3...